本征半导体中的拓扑位错响应
Topological Dislocation Response in Elementary Semiconductors
AI总结：
本研究通过分析本征半导体在空间反演对称下的特性，揭示了边缘位错的非平凡响应与螺旋位错的平凡响应，并通过数值模拟验证了中间间隙极化带的存在。
摘要：
我们研究了在空间反演下对称的本征半导体和绝缘体：硅、钻石、锗和黑磷。这些材料是实现受阻原子绝缘体的理想候选者，它们与平凡原子绝缘体的区别在于其电子沃里纳中心相对于原子晶格具有量化的空间位移。我们使用对称性指示符不变量，以预测这些材料对晶体位错的非平凡响应。我们发现边缘位错通常表现出非平凡响应，而螺旋位错始终显示平凡响应。借助现实紧束缚模型的数值模拟，我们确认了在硅、钻石和锗中沿位错存在的中间间隙极化带的存在。
英文摘要：
We study elementary semiconductors and insulators that are symmetric under spatial inversion: silicon, diamond, germanium, and black phosphorene. These materials are ideal candidates for realizing obstructed atomic insulators, which differ from trivial atomic insulators by a quantized spatial shift of their electronic Wannier centers with respect to the atomic lattice. We use symmetry indicator invariants that allow the prediction of non-trivial responses to crystal dislocations in these materials. We find that edge dislocations generically exhibit a non-trivial response, while screw dislocations always display a trivial response. With the aid of numerical simulations of realistic tight-binding models, we confirm the presence of mid-gap polarization bands localized along dislocations in silicon, diamond, and germanium.
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