Phonon frequency comb close to an isolated Einstein mode in InSiTe3
Center for Solid State Physics and New Materials, Institute of Physics Belgrade（贝尔格莱德物理研究所固态物理与新材料中心）；Departamento de Física de Materiales, Facultad de Ciencias, Universidad Autónoma de Madrid（马德里自治大学理学院材料物理系）；Department of Condensed Matter Physics, Jozef Stefan Institute（约泽夫·斯特凡研究所凝聚态物理系）；Shanghai Advanced Research in Physical Sciences (SHARPS)（上海物理科学研究院）；Center for Correlated Matter and School of Physics, Zhejiang University（浙江大学物理学院相关物质研究中心）
Tea Belojica, Jovan Blagojević, Sanja Djurdjić Mijin, Andrijana Šolajić, Jelena Pešić, Emil S. Božin, Bojana Višić, Yu Liu, Cedomir Petrovic, Zoran V. Popović, … 展开作者
Tea Belojica, Jovan Blagojević, Sanja Djurdjić Mijin, Andrijana Šolajić, Jelena Pešić, Emil S. Božin, Bojana Višić, Yu Liu, Cedomir Petrovic, Zoran V. Popović, Rudi Hackl, Ana Milosavljević, Nenad Lazarević
The emergence of phonon frequency combs exemplifies a rare and intriguing phenomenon in quantum solids. Materials with distinctive phonon band structures are especially promising for hosting such states, as their vibrational dispersion landscape across the Brillouin zone can facilitate the formation of long-lived, collective lattice excitations. In the layered Van der Waals compound InSiTe$_3$, polarization-resolved Raman spectroscopy reveals a pronounced anharmonicity in symmetry-predicted modes and the formation of a self-organized frequency domain structure (coherent-like state), in the range of a localized highenergy A$_{1g}$ phonon mode near 500 cm$^{-1}$. This strong phonon-phonon coupling manifests itself as an anomalous temperature dependence around 200 K, coinciding with the appearance of higher-order excitations within the phonon density of states gap. These findings position InSiTe$_3$ as an unconventional platform where intrinsic highly structured phonon spectral correlations and unusually strong anharmonic effects coexist, opening new avenues for exploring emergent vibrational phenomena in low-dimensional materials.
Spontaneous Symmetry Breaking and Collective Higgs-Goldstone Dynamics in Solid-State Phononic Frequency Combs
Birla Institute of Technology and Science, Pilani - Dubai Campus（比拉理工学院，皮拉尼-迪拜校区）；Birla Institute of Technology and Science, Pilani - Pilani Campus（比拉理工学院，皮拉尼-皮拉尼校区）
Princeton University（普林斯顿大学）；Zhejiang University（浙江大学）；Donostia International Physics Center（圣塞巴斯蒂安国际物理中心）；Max Planck Institute for Chemical Physics of Solids（马克斯·普朗克固体化学物理研究所）；Chongqing University（重庆大学）；University of the Basque Country UPV/EHU（巴斯克国立大学）；Peking University（北京大学）；IKERBASQUE, Basque Foundation for Science（伊克尔巴斯克，巴斯克科学基金会）
Electron Mobility in Monoclinic β-Ga2O3 - Effect of Plasmon-phonon Coupling, Anisotropy, and Confinement
采用基于密度泛函微扰理论的晶格动力学计算、晶格模与集体等离子体激元振荡的耦合计算和基于玻尔兹曼理论的输运计算相结合的方法，研究了单斜β-Ga 2 O 3中的电子输运.等离子体激元与不同的纵向光学（LO）模式的强纠缠使得LO-等离子体激元耦合的作用对于传输至关重要。研究了体材料和二维电子气形式下β-Ga_2 O_3中电子迁移率与电子密度的关系。在高电子密度下，预测体迁移率为182 cm 2/ V.s，而在2DEG形式中，当远程杂质存在于界面处时，相应的迁移率为约418 cm 2/V.s，并且随着远程杂质中心远离界面而进一步提高。电子迁移率的变化趋势表明，在掺杂隔离电子沟道中实现高电子迁移率是有希望的。通过瞬态蒙特卡罗模拟跟踪实验观察到的迁移率的小各向异性。研究发现，红外活性声子模的各向异性是导致低场电子迁移率各向异性的原因。
Trigonal-to-monoclinic structural transition in TiSe$_2$ due to a combined condensation of $\mathbf{ \textit{q} = (\frac{1}{2},0,0)}$ and $\mathbf{(\frac{1}{2},0,\frac{1}{2})}$ phonon instabilities
