低温下薄膜氧化锶钛的压电效应
Cryogenic piezoelectric effects in thin film strontium titanate devices
AI总结：
研究通过工程应变提升氧化锶钛薄膜的压电系数和低温线性压电响应，实现了首个性能优越的声光调制器，为低温量子光子学提供新材料。
摘要：
下一代量子技术需要高效转换电、光、机量子自由度以生成远距离大规模纠缠。此类转换器的性能受底层材料的低温性质限制。我们证明，在铁电薄膜氧化锶钛（SrTiO3）中引入应变不仅产生极高的Pockels系数，还在低温下产生稳健的线性压电响应，超越了之前的薄膜基准。我们测量了压电张量元素d15=151.8±1.5 pm/V和d33=54.8±4 pm/V，以及有效光弹性系数p_eff=0.56在5K时。利用这些增强特性，我们展示了首个SrTiO3-氧化物声光调制器，其电压-长度乘积（VπL）为0.874±0.084 V cm，优于目前未发布的调制器通常具有几V cm的性能。我们的结果确立了薄膜SrTiO3作为低温量子光子学集成系统的有前景的材料体系。
英文摘要：
Next generation quantum technologies will need to rely on efficient transduction between electrical, optical, and mechanical quantum degrees of freedom to generate large-scale entanglement over large distances. The performance of such transducers is fundamentally limited by the cryogenic properties of the underlying materials. Here, we demonstrate that engineering strain in ferroelectric thin-film strontium titanate ($\mathrm{SrTiO_3}$) not only results in an exceptionally large Pockels coefficient, but also in a robust linear piezoelectric response at cryogenic temperatures, surpassing previous thin-film benchmarks. We measure piezoelectric tensor elements of $d_{15} = 151.8 \pm 1.5$ pm/V and $d_{33} = 54.8 \pm 4$ pm/V, and an effective photoelastic coefficient of $p_{\mathrm{eff}}$ = 0.56 at 5~K. Utilizing these enhanced properties, we demonstrate the first $\mathrm{SrTiO_3}$-on-oxide acousto-optic modulator with a voltage-length product ($V_πL$) of $0.874 \pm 0.084$ V cm, outperforming state-of-the-art unreleased modulators that typically feature a $V_πL$ of a few V cm. Our results establish thin-film $\mathrm{SrTiO_3}$ as a promising material system for integrated quantum photonics operating at cryogenic temperatures.
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