碳掺杂六方氮化硼中的表面缺陷用于负对比直接激光写入
Surface defects in carbon-doped hexagonal boron nitride for negative-contrast direct laser writing
AI总结：
碳掺杂六方氮化硼中的表面缺陷通过光驱动结构重构和表面化学实现负对比直接激光写入，用于设计任意几何发光图案。
摘要：
六方氮化硼（hBN）中的辐射缺陷在从深紫外到近红外波长的广阔光谱范围内具有活性。这些缺陷的代表体作用于明亮的单光子源、自旋1系统和多属性原子级传感器。它们主要在 bulk hBN 膜中被研究，其中缺陷与表面和界面效应解耦。在这里，我们展示了一种新的表面缺陷，其在绿色/黄色可见光谱范围内具有光学活性，其光物理特性与 bulk 对应物不同。高功率共振激光照射淬灭了这些缺陷的发光，这归因于光驱动的结构重构。淬灭的缺陷通过热循环过程恢复其发光能力，揭示了结构转换的激活能为24.5 meV。或者，通过表面化学永久淬灭缺陷，涉及通过锂化实现的功能团附着。这些机制被用来实现负对比直接激光写入，设计任意几何发光图案，在微观配置中按需设计。hBN中的表面活性辐射中心在探索环境敏感性、表面科学以及与光子结构或电子设备耦合方面显得特别有吸引力，通过利用宿主晶格的二维特性。
英文摘要：
Radiative defects in hexagonal boron nitride (hBN) are active in a broad spectral range from deep ultraviolet to near-infrared wavelengths. Representatives of these defects act as bright single photon sources, spin-1 systems, and multiproperty atomic-scale sensors. They are predominantly investigated in bulk hBN films, where defects are decoupled from surface and interfacial effects. Here, we demonstrate a novel class of surface defects optically active in the green/yellow visible spectral range, which exhibit photophysical properties distinct from their bulk counterparts. High-power resonant laser illumination quenched the emission from the ensemble of such defects, which was attributed to a light-driven structural reconfiguration. The quenched defects were found to recover their emissive capabilities via a thermal cycling process, revealing an activation energy of 24.5 meV for the structural transition. Alternatively, permanent quenching of the defects was triggered by surface chemistry, involving lithiation-enabled attachment of functional groups. These mechanisms were utilized to realize negative-contrast direct laser writing, designing arbitrary geometric emissive patterns on demand in a microscopic configuration. The surface-active radiative centers in hBN appear particularly attractive for exploring environmental sensitivity, surface science, and coupling to photonic structures or electronic devices by taking unique advantage of the two-dimensional characteristics of the host lattice.
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