六方氮化硼的缺陷相关光致发光
Defect-related photoluminescence of hexagonal boron nitride
摘要：
用时间分辨和能量分辨光谱方法测量了多晶六方氮化硼（hBN）的光致发光。所观察到的带与DAP跃迁、杂质和结构缺陷有关。高于5.4 eV的高能光子激发样品，使光致发光（PSL）的现象，这是由于远距离捕获CB电子和VB空穴。这些被俘获的电荷是亚稳态的，并且它们与低能量光子的再激发导致反斯托克斯光致发光。光致发光激发光谱和PSL激发光谱的比较允许带分析，支持在hBN中具有大的结合能的类Frenkel激子的假设。
英文摘要：
Photoluminescence of polycrystalline hexagonal boron nitride (hBN) was measured by means of time- and energy-resolved spectroscopy methods. The observed bands are related to DAP transitions, impurities and structural defects. The excitation of samples by high-energy photons above 5.4 eV enables a phenomenon of photostimulated luminescence (PSL), which is due to distantly trapped CB electrons and VB holes. These trapped charges are metastable and their reexcitation with low-energy photons results in anti-Stockes photoluminescence. The comparison of photoluminescence excitation spectra and PSL excitation spectra allows band analysis that supports the hypothesis of Frenkel-like exciton in hBN with a large binding energy.
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