异质集成的磁致应变开关铁磁体/拓扑绝缘体/压电堆叠的设备应用
Device Applications of Heterogeneously Integrated Strain-Switched Ferrimagnets/Topological Insulator/Piezoelectric Stacks
AI总结：
通过异质集成铁磁体/拓扑绝缘体/压电堆叠，利用应变调控磁各向异性实现电流调制，用于跨导放大器或神经形态计算突触
摘要：
一组铁磁体（CoV2O4、GdCo、TbCo）在受到压缩应变时表现出平面外磁各向异性，在受到扩展应变时表现出平面内磁各向异性（或反之）。如果这样的铁磁体薄膜置于拓扑绝缘体（TI）薄膜之上，并且其磁各向异性通过应变调节，则铁磁体（FM）与底层拓扑绝缘体之间的界面交换耦合将调节后者表面电流的流动。如果应变连续变化，电流也将连续变化；如果应变随时间交替变化，电流也将以应变调节的频率交替，只要频率不是高到使周期小于铁磁体的开关时间。如果通过在FM/TI堆叠下方集成压电体，用门电压产生应变，则可以实现跨导放大器或神经形态计算的突触。
英文摘要：
A family of ferrimagnets (CoV2O4, GdCo, TbCo) exhibits out-of-plane magnetic anisotropy when strained compressively and in-plane magnetic anisotropy when strained expansively (or vice versa). If such a ferrimagnetic thin film is placed on top of a topological insulator (TI) thin film and its magnetic anisotropy is modulated with strain, then interfacial exchange coupling between the ferrimagnet (FM) and the underlying TI will modulate the surface current flowing through the latter. If the strain is varied continuously, the current will also vary continuously and if the strain alternates in time, the current will also alternate with the frequency of the strain modulation, as long as the frequency is not so high that the period is smaller than the switching time of the FM. If the strain is generated with a gate voltage by integrating a piezoelectric underneath the FM/TI stack, then that can implement a transconductance amplifier or a synapse for neuromorphic computation.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
