低损耗有机基铁磁体 V[TCNE]$_{x\sim 2}$ 中铁磁共振的原位电场调控
$\textit{In situ}$ electric-field control of ferromagnetic resonance in the low-loss organic-based ferrimagnet V[TCNE]$_{x\sim 2}$
AI总结：
本文研究了有机基铁磁体 V[TCNE]$_x$ 与 PMN-PT 压电换能器耦合器件中铁磁共振的电场调控，提出磁致伸缩敏捷性新指标，证明该材料在超低损耗应变调谐微波器件中具有竞争力。
摘要：
我们展示了在集成低损耗、分子基、室温铁磁体四氰基乙烯钒（V[TCNE]$_{x \sim 2}$）与 PMN-PT 压电换能器机械耦合的器件中，对铁磁共振（FMR）的间接电场调控。在对 V[TCNE]$_x$ 薄膜施加应变后，FMR 频率的调谐范围超过共振线宽的 6 倍，且对于 $α= 6.5 \times 10^{-5}$ 的样品，Gilbert 阻尼没有变化。我们证明这种调谐效应源于薄膜中应变相关的磁各向异性，并发现磁弹性系数 $|λ_S| \sim (1 - 4.4)$ ppm，这一结果得到了 DFT 计算和磁弹性理论的理论预测支持。注意到应变调谐 FMR 的应用空间正在迅速扩大，我们为磁致伸缩材料定义了一个新的度量指标，即磁致伸缩敏捷性（magnetostrictive agility），其定义为磁弹性系数与 FMR 线宽之比。该敏捷性指标允许在磁致伸缩材料之间进行直接比较，以评估它们在需要由应变调制的超低损耗磁共振的磁电应用中的相对效能。利用这一指标，我们表明 V[TCNE]$_x$ 与其他磁致伸缩材料（包括 YIG 和 Terfenol-D）相比具有竞争力。这种超窄线宽与磁致伸缩特性的结合，且该系统可以直接集成到功能器件中而无需在薄膜几何结构中进行异质集成，有望为电场调谐微波器件带来前所未有的功能，涵盖从低功耗、紧凑型滤波器和环行器到量子信息科学与技术中的新兴应用。
英文摘要：
We demonstrate indirect electric-field control of ferromagnetic resonance (FMR) in devices that integrate the low-loss, molecule-based, room-temperature ferrimagnet vanadium tetracyanoethylene (V[TCNE]$_{x \sim 2}$) mechanically coupled to PMN-PT piezoelectric transducers. Upon straining the V[TCNE]$_x$ films, the FMR frequency is tuned by more than 6 times the resonant linewidth with no change in Gilbert damping for samples with $α= 6.5 \times 10^{-5}$. We show this tuning effect is due to a strain-dependent magnetic anisotropy in the films and find the magnetoelastic coefficient $|λ_S| \sim (1 - 4.4)$ ppm, backed by theoretical predictions from DFT calculations and magnetoelastic theory. Noting the rapidly expanding application space for strain-tuned FMR, we define a new metric for magnetostrictive materials, $\textit{magnetostrictive agility}$, given by the ratio of the magnetoelastic coefficient to the FMR linewidth. This agility allows for a direct comparison between magnetostrictive materials in terms of their comparative efficacy for magnetoelectric applications requiring ultra-low loss magnetic resonance modulated by strain. With this metric, we show V[TCNE]$_x$ is competitive with other magnetostrictive materials including YIG and Terfenol-D. This combination of ultra-narrow linewidth and magnetostriction in a system that can be directly integrated into functional devices without requiring heterogeneous integration in a thin-film geometry promises unprecedented functionality for electric-field tuned microwave devices ranging from low-power, compact filters and circulators to emerging applications in quantum information science and technology.
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