arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2602.03424cond-mat.mtrl-sci
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单原子在六方氮化硼上吸附:从纯净表面到缺陷工程化位点

Single-Atom Adsorption on h-BN along the Periodic Table of Elements: From Pristine Surface to Vacancy-Engineered Sites

University of Belgrade − Faculty of Physical Chemistry(贝尔格莱德大学物理化学学院);Luleå University of Technology(吕勒奥理工大学);Serbian Academy of Sciences and Arts(塞尔维亚科学与艺术院)

Ana S. Dobrota, Natalia V. Skorodumova, Igor A. Pašti

AI总结:

研究单原子在六方氮化硼上吸附行为,揭示空位工程对吸附能的影响,提出缺陷工程用于调控h-BN性能的方法。

摘要:

利用密度泛函理论系统研究了单原子在纯净和缺陷的六方氮化硼(h-BN)上的吸附行为。研究了周期表前三行元素以及选定的过渡金属和贵金属在纯净表面和硼-氮空位位点上的吸附情况。在纯净的h-BN表面,吸附通常较弱,主要由色散力主导,可测量的化学吸附仅限于高度电负性原子,如C、O和F。引入空位将h-BN转化为化学活性材料,使吸附能增加一个到两个数量级。硼空位通过与未配位的氮原子配位,稳定金属和电正性物种,而氮空位则选择性地结合电负性和共价吸附物。吸附能与元素结合能的标度区分了物理吸附、化学吸附和取代稳定化区域。这些见解为周期表范围内吸附趋势提供了统一描述,并确立了缺陷工程作为定制h-BN催化、传感和电子性质的有效策略。

英文摘要:

The adsorption of single atoms on pristine and defected hexagonal boron nitride (h-BN) was systematically investigated using density functional theory. Elements from the first three rows of the periodic table, together with selected transition and coinage metals, were examined on the pristine surface and at boron- and nitrogen-vacancy sites. On pristine h-BN, adsorption is generally weak and dominated by dispersion forces, with measurable chemisorption limited to highly electronegative atoms such as C, O, and F. The introduction of vacancies transforms h-BN into a chemically active material, increasing adsorption energies by one to two orders of magnitude. The boron vacancy strongly stabilizes metallic and electropositive species through coordination to undercoordinated nitrogen atoms, whereas the nitrogen vacancy selectively binds electronegative and covalent adsorbates. Scaling of adsorption energies with elemental cohesive energies distinguishes regimes of physisorption, chemisorption, and substitutional stabilization. These insights provide a unified description of adsorption trends across the periodic table and establish defect engineering as an effective strategy for tailoring the catalytic, sensing, and electronic properties of h-BN.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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