在GaInP/MoSe2单层异质结中费米极子的光学性质
Optical properties of Fermi polarons in a GaInP/MoSe2 monolayer heterostructure
AI总结：
研究通过GaInP/MoSe2异质结操控TMDCs光学性质，发现费米极子准粒子共振现象。
摘要：
工程光学性质，如发光纯度和电荷转移，对于利用原子薄过渡金属二硫化物（TMDCs）的应用潜力至关重要。尽管静电栅极广泛用于在TMDC单层中获得电荷控制，但通过在半导体III/V、有机或范德瓦尔界面耦合TMDC单层，也可以工程化电荷转移。这带来了诸多优势，例如易于实施和在器件集成中的兼容性。在此，我们关注GaInP/MoSe2界面出现的多粒子复合物的光学性质，作为在集成光子器件中操控TMDCs光学性质的高度相关材料组合。我们的研究验证了其作为类型II异质界面的性质，这使得无散射的发光成为可能。通过光学吸收测量，我们验证了带电复合物获得显著的振子强度。此外，通过温度依赖的发光，结合微观理论框架，证实了在TMDCs发光中之前观察到的特征载流子 recoil 效应的抑制。这些现象使我们能够识别TMDC-GaInP界面的发光特征为费米极子准粒子共振，这对于研究凝聚态系统中的玻色-费米混合物具有重要意义。
英文摘要：
Engineering optical properties, such as luminescence purity and charge transfer, is crucial for harnessing the application potential of atomically thin transition metal dichalcogenides (TMDCs). While electrostatic gating is widely applied to gain charge control in TMDC monolayers, charge transfer can also be engineered via coupling of TMDC monolayers at semiconductor III/V, organic, or van der Waals interfaces. This confers great advantages, such as ease in implementation and compatibility in device integration. Here, we shed light on the optical properties of many-particle complexes emerging at the GaInP/MoSe2 interface as a highly relevant material combination to manipulate the optical properties of TMDCs in integrated photonic devices. Our study verifies its nature as a type II hetero-interface, which bears the feasibility to display disorder-free photoluminescence. Through optical absorption measurements, we verify that the charged complexes acquire substantial oscillator strength. Furthermore, temperature-dependent photoluminescence, supported by a microscopic theory framework, evidences the suppression of the characteristic carrier recoil effect that was previously observed in the photoluminescence of trions in TMDCs. These phenomena allow us to identify the optical signatures at the TMDC-GaInP interface as Fermi polaron quasiparticle resonances, which are of high importance in researching Bose-Fermi mixtures in condensed matter systems.
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