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arXiv 2511.09751cond-mat.mtrl-sci
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Ni-M-Ga中反相边界的结构:多尺度建模

Structure of Antiphase boundaries in Ni-M-Ga: multiscale modelling

Jan Zemen, František Máca, Václav Drchal, Martin Veis, Oleg Heczko

AI总结:

针对Ni-Mn-Ga中反相边界(APBs)原子尺度交换作用与微米尺度MFM磁对比度关联不明的问题,结合密度泛函理论与有限元静磁学建模,发现APB对包围反平行磁化薄区域是MFM对比度起源,解释了其畴壁钉扎强度,为定制矫顽力的磁形状记忆合金设计提供依据。

摘要:

反相边界(APBs)在有序Heusler合金中普遍存在,对Ni-Mn-Ga的磁矫顽力有强烈影响,但它们的原子尺度交换相互作用与通过磁力显微镜(MFM)测量的微米尺度磁对比度之间的联系仍不明确。我们结合密度泛函理论(DFT)和有限元静磁学来桥接Ni-Mn-Ga中的这些尺度。对包含平面APBs的超胞进行的DFT计算表明,最低能量构型由一对平行APBs组成,它们包围着一个纳米级区域——仅3个Mn-Ga原子层厚——其磁化强度与周围基体反平行,这是由于每个APB上存在强反铁磁交换(与体马氏体中的铁磁耦合相反)。根据我们的静磁有限元模型,这个具有反平行磁化的薄区域产生了从APB对延伸约100 nm的特征MFM对比度。当APBs间距超过50 nm时,偶极-偶极能惩罚超过交换能增益,阻止扩展反平行畴的形成,这与实验证据一致。这些结果确定APB对是观察到的MFM对比度的起源,并为APBs对畴壁钉扎的适度强度提供了解释,为定制矫顽力的磁形状记忆合金设计提供了信息。

英文摘要:

Antiphase boundaries (APBs) are ubiquitous in ordered Heusler alloys and strongly influence magnetic coercivity in Ni-Mn-Ga, yet the link between their atomic-scale exchange interactions and micrometer-scale magnetic contrast measured by magnetic force microscopy (MFM) remains unclear. We combine density functional theory (DFT) and finite-element magnetostatics to bridge these scales in Ni-Mn-Ga. DFT calculations on supercells containing planar APBs show that the lowest-energy configuration comprises a pair of parallel APBs enclosing a nanoscale region - only three Mn-Ga atomic layers thick - whose magnetization is antiparallel to the surrounding matrix due to strong antiferromagnetic exchange across each APB (in contrast to ferromagnetic coupling in bulk martensite). According to our magnetostatic finite element model, this thin region with antiparallel magnetization generates the characteristic MFM contrast extending approx. 100 nm from the APB pair. When the APBs are further apart than 50 nm, dipole-dipole penalties outweigh exchange gains, preventing formation of an extended antiparallel domain, in agreement with experimental evidence. These results identify APB pairs as the origin of the observed MFM contrast and offer an interpretation of the modest strengths of domain-wall pinning by APBs, informing the design of magnetic shape-memory alloys with tailored coercivity.

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