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arXiv 2511.08166cond-mat.mtrl-sciphysics.optics
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激子移流电流诱导层状MoS2晶体宽带THz脉冲发射效率

Excitonic shift current induced broadband THz pulse emission efficiency of layered MoS2 crystals

Femtosecond Spectroscopy and Nonlinear Photonics Laboratory, Department of Physics, Indian Institute of Technology Delhi(印度德里理工学院物理系飞秒光谱与非线性光子学实验室)

Neetesh Dhakar, Sunil Kumar

AI总结:

研究通过超快光激发揭示了激子移流电流在低温下增强单晶MoS2 THz发射的机制,发现激子密度依赖性实验表明在临界能量密度150微焦/平方厘米以上时,THz发射显著下降,暗示电子-空穴液体的形成。

摘要:

在半导体超快光激发后,光载流子、高能激子的多体瞬态态和电子-空穴液体之间存在竞争动态。本文展示,飞秒光学脉冲激发诱导了瞬时激子移流电流,从而在低温下增强单晶体MoS2的THz发射。通过不同温度下激发密度依赖性实验,揭示了主导激子移流电流的控制。在非常低的20K温度下,激子贡献在临界能量密度150微焦/平方厘米以上显著减少。这种行为表明,在激子密度极高的情况下,即激子对的平均间距与激子半径相当的区域,形成了新的量子凝聚态,即电子-空穴液体。此外,不同温度下激子密度依赖的THz发射与Varshni模型和晶体德拜温度260K一致。

英文摘要:

Following the ultrafast photoexcitation of a semiconductor, it embodies competing dynamics among photocarriers, many-body transient states of highly energetic excitons, and electron-hole liquid. Here, we show that femtosecond optical pulse excitation induces transient excitonic shift current contributing to stronger THz emission from a single crystalline bulk MoS2 at low temperatures. The control of dominating excitonic shift current is elucidated from excitation density dependent experiments at varying temperatures. A strong decrease in the excitonic contribution beyond a critical fluence of 150microJ/cm^2 is observed at a very low temperature of 20K. This behavior suggests the formation of a new quantum condensate, i.e., the electron-hole liquid, in the regime when the exciton density is overwhelmingly large that the average spacing between exciton pairs is comparable to the exciton radius. Furthermore, the exciton density dependent THz emission at varying temperatures is consistent with the Varshni model and the crystal Debye temperature of 260K.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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