电荷有序转变以下Cs₃Sb₅与ScV₆Sn₆的高分辨率极向克尔效应研究
High Resolution Polar Kerr Effect Studies of Cs3Sb5 and ScV6Sn6 Below the Charge Order Transition
AI总结：
本研究利用两台不同波长的零面积环Sagnac干涉仪，测量CsV₃Sb₅和ScV₆Sn₆单晶电荷有序转变下的自发极向克尔效应，零场下未检测到信号，施加应变也未观测到有限克尔效应。
摘要：
我们报道了对CsV₃Sb₅和ScV₆Sn₆单晶开展的高分辨率极向克尔效应测量，旨在寻找这些材料的电荷有序转变以下自发极向克尔效应（PKE）的特征。我们使用两台分别工作在1550 nm和830 nm波长的独立零面积环Sagnac干涉仪，研究了经磁场训练后可能存在的PKE的温度依赖关系。虽然有限场克尔测量得到了由巡游载流子的泡利顺磁性预期的旋光结果，但在零场下未检测到信号，仪器的噪声底限低于约100纳弧度。同步的相干反射测量证实，在与克尔测量相同的光学体积内，电荷有序转变是锐利的。施加应变以揭示隐藏的通量有序磁态，也未产生有限克尔效应。
英文摘要：
We report high resolution polar Kerr effect measurements on CsV3Sb5 and ScV6Sn6 single crystals in search for signatures of spontaneous polar Kerr effect (PKE) below the charge order transitions of these materials. Utilizing two separate zero-area loop Sagnac interferometers operating at 1550 nm and 830 nm wavelengths, we studied the temperature dependence of possible PKE after training with magnetic field. While a finite field Kerr measurement yielded optical rotation expected from the Pauli susceptibility of the itinerant carriers, no signal was detected at zero-field to within the noise floor limit of the apparatus of below $\sim$100 nanoradians. Simultaneous coherent reflection measurements confirm the sharpness of the charge order transition in the same optical volume as the Kerr measurements. Application of strain to reveal a hidden flux-ordered magnetic state did not result in a finite Kerr effect.
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