原子电子晶体管的相干物质波发射
Coherent matter wave emission from an atomtronic transistor
AI总结：
本文用含时 Gross-Pitaevskii 方程模拟源、栅、漏三阱原子电子晶体管，发现漏极相干物质波发射主要由源极化学势与栅阱离散能级对齐导致的单粒子共振控制，而非非线性多体耦合。
摘要：
原子电子物质波三阱晶体管在理论上被预测会表现出电流增益，并充当相干物质波发射器。在本工作中，我们研究了一种由三阱势——源极、栅极和漏极——组成的原子电子晶体管的动力学，该系统由含时 Gross-Pitaevskii 方程建模。我们系统地考察了漏极布居和电流对源极偏置势以及原子间相互作用强度的依赖关系。我们的模拟揭示了当源极化学势与栅阱中的离散能级对齐时的共振隧穿特征，从而在漏极产生相干物质波发射。与此前通过耦合栅阱模式预测相互作用诱导电流增益的多体研究相反，我们的结果表明，漏极中的相干性主要由单粒子共振支配，没有来自非线性耦合的明显展宽。
英文摘要：
The atomtronic matter-wave triple-well transistor is theoretically predicted to exhibit current gain and act as a coherent matter-wave emitter. In this work, we investigate the dynamics of an atomtronic transistor composed of a triple-well potential -- source, gate, and drain -- modeled by the time-dependent Gross-Pitaevskii equation. We systematically explore the dependence of the drain population and the current on the source bias potential and the strength of the interatomic interaction. Our simulations reveal signatures of resonant tunneling when the source chemical potential aligns with discrete energy levels in the gate well, leading to coherent matter-wave emission in the drain. Contrary to previous many-body studies that predicted interaction-induced current gain via coupling to gate well modes, our results suggest that coherence in the drain is primarily governed by single-particle resonances, with no evident broadening from nonlinear coupling.
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