六方堆叠CrI3中的滑动多铁性
Sliding multiferroicity in hexagonal stacked CrI3
AI总结：
本研究通过堆叠序工程在极性六方堆叠CrI3中实现新型滑动多铁性，利用层间自旋极化电荷转移实现0.4V低电压非易失性磁翻转，为低功耗二维电子与自旋电子器件提供新途径。
摘要：
在二维（2D）极限下开发具有高能效磁电耦合的新型多铁材料，既能揭示新型有序态的相互作用物理，也能推动片上高性能计算应用的发展。本文采用堆叠序工程，基于极性六方堆叠（H堆叠）CrI3构建了一类新型二维多铁材料——滑动多铁材料。这种新型堆叠序打破了结构反演对称性，产生了室温滑动铁电性，该结果已通过拉曼光谱、二次谐波产生光谱和电输运测量得到证实。结合栅极依赖的反射磁圆二色性、第一性原理计算与建模研究，滑动铁电性通过层间自旋极化电荷转移，与新出现的界面铁磁性产生相互作用。这种耦合机制使得H堆叠CrI3仅需低至0.4V的电压即可实现非易失性磁翻转。本研究证明，对二维磁体进行极性堆叠序工程是构建具有高效磁电耦合的非易失性二维多铁材料的通用方法，为原子级厚度极限下的低功耗电子学和自旋电子学铺平了道路。
英文摘要：
Developing new multiferroics at the two-dimensional (2D) limit with energy-efficient magnetoelectric coupling can inform the interplay physics of novel orders and advance on-chip high-performance computing applications. Here we apply stacking order engineering to create a new type of 2D multiferroics, namely sliding multiferroics, based on polar hexagonal stacked (H-stacked) CrI3. This new stacking order removes structural inversion symmetry and gives rise to room temperature sliding ferroelectricity, as confirmed by Raman spectroscopy, second harmonic generation spectroscopy and electrical transport measurements. Building upon the gate-dependent reflective magnetic circular dichroism, first-principles calculations, and modeling, sliding ferroelectricity is shown to interplay with an emergent interfacial ferromagnetism via interlayer spin-polarized charge transfer. This coupling mechanism results in non-volatile magnetic switching by as low as 0.4V across the H-stacked CrI3. Our demonstration introduces polar stacking order engineering of 2D magnets as a general approach to create non-volatile 2D multiferroics with efficient magnetoelectric coupling, paving the way for low-power electronics and spintronics at the atomically thin limit.
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