AI 中文总结
本文结合KPFM与低频拉曼光谱研究3R-MoS₂，发现ABA与BAB堆叠在KPFM中无法区分但剪切模差异显著，标准键极化率模型无法解释该差异，需采用光谱-扫描探针结合的方法确定滑动铁电堆叠序。
AI 中文摘要
平行堆叠的二维范德华材料中的滑动铁电性可实现多种新型器件概念，但利用该特性需要可靠、非破坏性地确定底层堆叠序和极化状态。本文结合开尔文探针力显微镜（KPFM）与低频拉曼光谱，探测hBN衬底上剥离的三层3R-MoS₂薄片的极化畴和堆叠构型。研究发现，净极化为零的ABA和BAB堆叠在KPFM中无法区分，但表现出截然不同的低频剪切模；该观察结果在多个薄片上均重复出现，并得到低温光致发光的证实。值得注意的是，标准键极化率模型无法解释ABA和BAB构型间剪切模活性的差异，表明这些堆叠的层间拉曼响应受简单极化率图像之外的物理机制支配。研究结果显示，单独使用此处采用的任何一种技术都不足以确定滑动铁电堆叠序，因此需采用光谱-扫描探针结合的方法。
英文摘要
Sliding ferroelectricity in parallel-stacked two-dimensional van der Waals materials enables a broad range of novel device concepts, but exploiting it requires reliable, non-destructive assignment of the underlying stacking order and polarization state. Here, we combine Kelvin-probe force microscopy (KPFM) with low-frequency Raman spectroscopy to probe the polarization domains and stacking configurations of a exfoliated trilayer 3R-MoS$_{2}$ flake on a hBN substrate. We find that ABA and BAB - both stackings with zero net polarization - are indistinguishable in KPFM, yet show drastically different low-frequency shear modes. This observation is reproduced across multiple flakes and is corroborated by low-temperature photoluminescence. Notably, the standard bond-polarizability model does not account for the difference in shear-mode activity between the ABA and BAB configurations, indicating that the interlayer Raman response of these stackings is governed by physics beyond a simple polarizability picture. Our results show that none of the here-used individual techniques alone is sufficient to assign sliding-ferroelectric stacking order and motivate a combined spectroscopic-scanning-probe approach.
