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arXiv 2508.19084cond-mat.str-el
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一维莫特绝缘体中自旋子-科尼特效应的隧穿光谱

Tunneling spectroscopy of the spinon-Kondo effect in one-dimensional Mott insulators

Rodrigo G. Pereira, Bruno F. Marquez, Karen Hallberg, Tim Bauer, Reinhold Egger

AI总结:

本研究通过非线性卢蒂希液体理论和DMRG模拟,揭示了一维莫特绝缘体中磁性杂质诱导的亚能隙TDOS中费米边奇点特征,其幂律指数由自旋子-科尼特效应决定。

摘要:

我们研究了一维莫特绝缘体在低于电荷能隙的能量下的隧穿密度态(TDOS)。通过非线性卢蒂希液体理论和密度矩阵重整化群(DMRG)模拟,我们预测在边界存在磁性杂质的情况下,TDOS近边界处的亚能隙能量处会出现特征费米边奇点特征。与金属中的科尼特效应不同,这些共振是强烈不对称的,并呈幂律形式。幂律指数是普遍的,并由自旋子-科尼特效应决定。

英文摘要:

We study the tunneling density of states (TDOS) in one-dimensional Mott insulators at energies below the charge gap. By employing nonlinear Luttinger liquid theory and density-matrix renormalization group (DMRG) simulations, we predict that in the presence of a magnetic impurity at the boundary, characteristic Fermi-edge singularity features can appear at subgap energies in the TDOS near the boundary. In contrast to the Kondo effect in a metal, these resonances are strongly asymmetric and of power-law form. The power-law exponent is universal and determined by the spinon-Kondo effect.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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