固态氖作为高于100 mK的电子量子比特的噪声鲁棒宿主
Solid neon as a noise-resilient host for electron qubits above 100 mK
AI总结：
研究固态氖作为电子量子比特宿主在100 mK以上温度下的噪声鲁棒性，展示其在高频率下维持超长相干时间的能力。
摘要：
固态氖可以作为单电子量子比特的固态宿主，在约10 mK温度下，电子-固态氖电荷量子比特表现出长相干时间和高操作保真度。然而，系统化表征此类系统的噪声特征对于发展可扩展的量子信息架构至关重要。本文表明，固态氖可以作为高于100 mK的电子量子比特的噪声鲁棒宿主。我们研究了电子-固态氖电荷量子比特在远离电荷不敏感甜点并处于较高温度时，固态氖对电荷和热噪声的鲁棒性。我们发现，提取的电子-固态氖量子比特的高频电荷噪声密度，投影为附近电极上的电压波动，在0.01到1 MHz范围内为10^{-4}到10^{-6} μV²/Hz，与常见半导体宿主相当。我们还发现，电子-固态氖电荷量子比特在约5 GHz频率下，可在高达400 mK温度下维持超过1 μs的回声相干时间。
英文摘要：
Solid neon can be used as a solid host for single-electron qubits, and at temperatures of around 10 mK, electron-on-solid-neon charge qubits exhibit long coherence times and high operation fidelities. However, systematic characterization of the noise features of such systems is needed for the development of scalable quantum information architectures. Here, we show that solid neon can be used as a noise-resilient host for electron qubits above 100 mK. We examine the resilience of solid neon against charge and thermal noise when electron-on-solid-neon charge qubits are operated away from the charge-insensitive sweet spot and at elevated temperatures. We show that the extracted high-frequency charge noise density of electron-on-solid-neon qubits, projected as voltage fluctuations on nearby electrodes, is between $10^{-4}$ and $10^{-6}~\mathrm{μV^2/Hz}$ at 0.01 to 1 MHz, which is comparable with common semiconductor hosts. We also show that the electron-on-solid-neon charge qubits operating around 5 GHz frequencies can maintain echo coherence times of over 1 $μ$s at temperatures up to 400 mK.
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