六方氮化硼中 $V_{B}$ 中心基态自旋的退相干时间
Decoherence time of the ground state spin of $V_{B}$ centers in hexagonal boron nitride
AI总结：
本文通过考虑偶极超精细和自旋-声子相互作用，研究了六方氮化硼中 $V_{B}$ 中心电子自旋的退相干时间，发现室温下 Hahn-echo 相干时间约为 30 μs，为 hBN 缺陷在量子信息应用中的可行性提供了理论依据。
摘要：
六方氮化硼（hBN）中光学活性缺陷的基态自旋为量子信息应用提供了一个有前景的平台，例如用于量子计算的量子比特和纳米尺度传感。量子比特的一个关键特性是其退相干时间，因为其持续时间和可控性对于量子技术中的实际应用至关重要。在这项工作中，我们通过考虑偶极超精细相互作用以及自旋-声子相互作用，研究了 hBN 晶格中带负电的硼空位（$V_{B}$ 中心）的电子自旋退相时间。我们采用基于 Holstein-Primakoff 变换的近似方法来考虑大量核自旋，并采用 Debye 模型来考虑晶格声子的影响。我们表明，在存在偶极超精细相互作用的情况下，$V_{B}$ 电子自旋的 Hahn-echo 相干时间在室温下约为 $30\\: \mathrm{μs}$。我们的结果为理解 hBN 中 $V_{B}$ 缺陷的退相干迈出了一步，这可能用于量子信息应用。
英文摘要：
The ground-state spin of optically active defects in hexagonal boron nitride (hBN) offers a promising platform for quantum information applications, such as qubits for quantum computing and nanoscale sensing. A key characteristic of a qubit is its decoherence time, as its duration and controllability are critical for practical applications in quantum technologies. In this work, we investigate the electron spin dephasing time of the negatively charged boron vacancies, $V_{B}$ centers, in the hBN lattice by considering the dipolar hyperfine as well as spin-phonon interactions. We employ an approximate method based on the Holstein-Primakoff transformation to take into account a large number of nuclear spins and Debye model to consider the effect of lattice phonons. We show that, in the presence of the dipolar hyperfine interactions, Hahn-echo coherence time of the $V_{B}$ electron spin is approximately $30\: \mathrm{μs}$ at room temperature. Our results provide a step forward in understanding the $V_{B}$ defect decoherence in the hBN, which might be used for quantum information applications.
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