氮同位素对六方氮化硼中硼空位量子传感器的影响
Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride
AI总结：
本文研究$^{15}$N同位素富集hBN中硼空位缺陷的磁共振特性，测得$^{15}$N自旋超精细相互作用参数为64 MHz，为量子传感用hBN提供了设计准则。
摘要：
近年来，人们对将六方氮化硼（hBN）用于量子技术的研究兴趣日益增长。在此，我们研究了氮同位素对硼空位（V$_\text{B}$）缺陷的影响，该缺陷是量子传感器的候选体系之一，所用样品为通过复分解反应合成的$^{15}$N同位素富集hBN。拉曼位移随约化质量发生标度变化，这与先前关于硼同位素富集的研究结果一致。我们获得了依赖于氮同位素组成的V$_\text{B}$缺陷磁共振谱，并确定$^{15}$N自旋的超精细相互作用参数大小为64 MHz。我们的研究为用于量子传感的hBN提供了设计准则。
英文摘要：
There has been growing interest in studying hexagonal boron nitride (hBN) for quantum technologies. Here, we investigate nitrogen isotope effects on boron vacancy (V$_\text{B}$) defects, one of the candidates for quantum sensors, in $^{15}$N isotopically enriched hBN synthesized using a metathesis reaction. The Raman shifts are scaled with the reduced mass, consistent with previous work on boron isotope enrichment. We obtain nitrogen isotopic composition-dependent magnetic resonance spectra of V$_\text{B}$ defects and determine the magnitude of the hyperfine interaction parameter of $^{15}$N spin to be 64 MHz. Our investigation provides a design policy for hBNs for quantum sensing.
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