arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~
arXiv 2501.04535quant-phphysics.app-ph
收藏

原子尺度半导体器件路线图

Roadmap on Atomic-scale Semiconductor Devices

Steven R. Schofield, Andrew J. Fisher, Eran Ginossar, Joseph W. Lyding, Richard Silver, Fan Fei, Pradeep Namboodiri, Jonathan Wyrick, M. G. Masteghin, D. C. Cox… 展开作者

Steven R. Schofield, Andrew J. Fisher, Eran Ginossar, Joseph W. Lyding, Richard Silver, Fan Fei, Pradeep Namboodiri, Jonathan Wyrick, M. G. Masteghin, D. C. Cox, B. N. Murdin, S. K Clowes, Joris G. Keizer, Michelle Y. Simmons, Holly G. Stemp, Andrea Morello, Benoit Voisin, Sven Rogge, Robert A. Wolkow, Lucian Livadaru, Jason Pitters, Taylor J. Z. Stock, Neil J. Curson, Robert E. Butera, Tatiana V. Pavlova, A. M. Jakob, D. Spemann, P. Räcke, F. Schmidt-Kaler, D. N. Jamieson, Utkarsh Pratiush, Gerd Duscher, Sergei V. Kalinin, Dimitrios Kazazis, Procopios Constantinou, Gabriel Aeppli, Yasin Ekinci, James H. G. Owen, Emma Fowler, S. O. Reza Moheimani, John N. Randall, Shashank Misra, Jeffrey Ivie, Christopher R. Allemang, Evan M. Anderson, Ezra Bussmann, Quinn Campbell, Xujiao Gao, Tzu-Ming Lu, Scott W. Schmucker

AI总结:

本文回顾Kane 1998年硅施主自旋方案提出后25年的进展,涵盖硅基量子计算机探索、多材料系统与制造技术,讨论关键器件进展、新杂质种类与方法,为原子尺度半导体量子技术提供路线图。

摘要:

半导体中的自旋态为量子比特提供了异常稳定且抗噪声的环境,使其成为可靠量子计算技术的最佳候选者。1998年Kane提出的利用硅中施主原子的核自旋和电子自旋的方案,催生了一个新的研究领域,该领域专注于利用扫描隧道显微镜和离子注入技术为量子器件精确定位单个杂质原子。本文回顾了Kane提出方案后25年的进展、当前挑战以及原子尺度半导体器件制造和测量的未来方向。它涵盖了创建硅基量子计算机的探索,并扩展到包括多种材料系统和制造技术,强调了广泛半导体量子技术应用的潜力。关键进展包括硅中磷器件(如单原子晶体管、阵列化少施主器件、单量子比特和双量子比特门、三维架构)以及未来量子集成电路工具箱的开发。该路线图还探索了新的杂质种类(如砷和锑)以提高可扩展性和更高维度的自旋系统,掺杂前驱体和光刻胶的新化学方法,以及锗基器件的潜力。讨论了新兴方法(如基于光子的光刻和电子束操控)的颠覆性潜力。该路线图描绘了通往可扩展量子计算和先进半导体量子技术的路径,强调了实验、技术开发和理论的关键交叉点。

英文摘要:

Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of donor atoms in silicon, introduced by Kane in 1998, sparked a new research field focused on the precise positioning of individual impurity atoms for quantum devices, utilising scanning tunnelling microscopy and ion implantation. This roadmap article reviews the advancements in the 25 years since Kane's proposal, the current challenges, and the future directions in atomic-scale semiconductor device fabrication and measurement. It covers the quest to create a silicon-based quantum computer and expands to include diverse material systems and fabrication techniques, highlighting the potential for a broad range of semiconductor quantum technological applications. Key developments include phosphorus in silicon devices such as single-atom transistors, arrayed few-donor devices, one- and two-qubit gates, three-dimensional architectures, and the development of a toolbox for future quantum integrated circuits. The roadmap also explores new impurity species like arsenic and antimony for enhanced scalability and higher-dimensional spin systems, new chemistry for dopant precursors and lithographic resists, and the potential for germanium-based devices. Emerging methods, such as photon-based lithography and electron beam manipulation, are discussed for their disruptive potential. This roadmap charts the path toward scalable quantum computing and advanced semiconductor quantum technologies, emphasising the critical intersections of experiment, technological development, and theory.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑