具有空间调制结终端扩展和亚1V开启电压的>3kV NiO/Ga2O3异质结二极管
>3kV NiO/Ga2O3 Heterojunction Diodes with Space-Modulated Junction Termination Extension and Sub-1V Turn-on
AI总结：
本文提出采用两步空间调制结终端扩展的垂直NiO/Ga2O3异质结二极管，实现超过3 kV击穿电压、0.8V低开启电压和2 GW·cm²以上的单极品质因数，在亚1V开启器件中性能领先。
摘要：
本工作展示了高性能垂直NiO/Ga2O3异质结二极管（HJD），其采用两步空间调制结终端扩展（SM-JTE）。与当前最先进的Ga2O3 HJD不同，我们实现了超过3 kV的击穿电压，同时具有0.8V的低开启电压（VON），该值在正向电流密度（IF）为1 A·cm⁻²时估算。所测器件展现出优异的开启特性，在1.5V正向偏压下达到100 A·cm⁻²的电流密度，并具有4.4 mΩ·cm²的低微分比导通电阻（Ron,sp）。SM-JTE通过宽度和间距各异的同心NiO环实现，近似于JTE电荷的逐渐降低。计算得到的单极品质因数（FOM）超过2 GW·cm²，在亚1V开启器件中属于已报道的最佳水平之一。所制备的器件在击穿电压测试期间施加3 kV反向偏置应力后，正向I-V特性变化极小。
英文摘要：
This work demonstrates high-performance vertical NiO/Ga2O3 heterojunction diodes (HJDs) with a 2-step space-modulated junction termination extension. Distinct from the current state-of-the-art Ga2O3 HJDs, we achieve breakdown voltage exceeding 3 kV with a low turn on voltage (VON) of 0.8V, estimated at a forward current density (IF) of 1 A-cm-2. The measured devices exhibit excellent turn-on characteristics achieving 100 A-cm-2 current density at a forward bias of 1.5V along with a low differential specific on-resistance (Ron,sp) of 4.4 mΩ-cm2. The SM-JTE was realized using concentric NiO rings with varying widths and spacing that approximates a gradual reduction in JTE charge. The unipolar figure of merit (FOM) calculated exceeds 2 GW-cm2 and is among the best reported for devices with a sub-1V turn-on. The fabricated devices also displayed minimal change in forward I-V characteristics post reverse bias stress of 3 kV applied during breakdown voltage testing.
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