发表机构
University of California Santa Barbara（加州大学圣塔芭芭拉分校）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
该研究采用低损伤电子束NiO$_x$中间层制备FP-HJD，在MOCVD生长的(010) β-Ga$_2$O$_3$漂移层上实现了超4 MV/cm的击穿场强与1.14 GW/cm²的PFOM，达到该类二极管的最新性能水平。
AI 中文摘要
我们报道了低损伤电子束NiO$_x$沉积工艺的应用，以在(010) β-Ga$_2$O$_3$薄膜上制备场板异质结二极管（FP-HJD），其临界击穿场强超过4 MV/cm，功率品质因数（PFOM）大于1 GW/cm²。二极管制备在2.67×10¹⁶ cm⁻³ intentional掺杂的6.2 μm厚外延层上，该外延层通过金属有机化学气相沉积（MOCVD）在导电Sn掺杂β-Ga₂O₃(010)衬底上生长，使用TMGa、O₂、Ar载气和SiH₄作为硅掺杂源。台面刻蚀的FP-HJD器件在溅射NiO$_x$层前采用了薄的7 nm电子束NiO$_x$中间层，以消除溅射诱导的离子对(010)外延层的损伤影响。电流-电压测量结果显示，在4 V时正向电流密度为700 A/cm²，HJD理想因子为1.29，内建电势（V$_{bi}$）为2 V，整流比为10¹¹，差分比导通电阻（R$_{on,sp}$）为2.36 mΩ·cm²。(010) FP-HJD的击穿电压为1.64 kV，导致击穿时的平行平面电场（E$_{||,max}$）为4.02 MV/cm，PFOM为1.14 GW/cm²，这是MOCVD生长的(010)漂移层二极管的最新水平结果。
英文摘要
We report on the utilization of a low-damage e-beam NiO$_x$ deposition process to realize field-plated heterojunction diodes (FP-HJDs) on (010) $β$-Ga$_2$O$_3$ films with high critical breakdown field strengths beyond 4 MV/cm and power figure of merits (PFOM) of >1 GW/cm$^2$. Diodes were fabricated on a 2.67 $\times$ 10$^{16}$ cm$^{-3}$ intentionally doped 6.2 $μ$m thick epitaxial layer grown by metalorganic chemical vapor deposition (MOCVD) on a conductive Sn-doped $β$-Ga$_2$O$_3$ (010) substrate using TMGa, O$_2$, Ar carrier gas, and SiH$_4$ as the silicon dopant source. The mesa etched FP-HJD devices utilized a thin 7 nm e-beam NiO$_x$ interlayer before the sputtered NiO$_x$ layers to eliminate the effects of sputter-induced ion damage on the (010) epilayers. Current-Voltage measurements resulted in a forward current density of 700 A/cm$^2$ at 4 V, HJD ideality factor of 1.29, a V$_{bi}$ of 2 V, rectification ratio of 10$^{11}$, and a differential specific on resistance (R$_{on,sp}$) value of 2.36 m$Ω$ $\times$ cm$^2$. Breakdown of the (010) FP-HJDs was 1.64 kV, leading to a parallel plane electric field at breakdown (E$_{||,max}$) of 4.02 MV/cm and a PFOM of 1.14 GW/cm$^2$, which is a state-of-the-art result for diodes on MOCVD-grown (010) drift layers.
Comments19 pages, 7 figures
