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arXiv 2408.04571cond-mat.mtrl-scicond-mat.mes-hallphysics.chem-ph

理解胶体二维多层MAPbBr3钙钛矿纳米片中的光电过程:漏斗效应、复合与自陷激子

Understanding the Optoelectronic Processes in Colloidal 2D Multi-Layered MAPbBr3 Perovskite Nanosheets: Funneling, Recombination and Self-Trapped Excitons

André Niebur, Eugen Klein, Rostyslav Lesyuk, Christian Klinke, Jannika Lauth

AI总结:

本文利用飞秒瞬态吸收和时间分辨光致发光研究胶体二维MAPbBr3钙钛矿纳米片,揭示激子漏斗、俄歇复合与自陷激子机制,为LED和激光应用提供理论依据。

摘要:

准二维(2D)胶体合成使钙钛矿中的量子限域变得易于实现,为钙钛矿LED研究和激光研究带来了新的动力。超薄钙钛矿层表现出高激子结合能和有利于太阳能电池的电荷传输特性。在二维钙钛矿中,不同厚度层的组合有助于以定向方式将电荷载流子引导至带隙更小的较厚层。然而,关于激子和电荷载流子在这些结构中如何发生漏斗效应和复合的详细机制仍然缺乏。在此,我们通过飞秒瞬态吸收光谱和时间分辨光致发光对胶体二维甲基铵铅溴(MAPbBr3)Ruddlesden-Popper钙钛矿进行了表征,该材料在一个堆叠中具有广泛的层组合(n = 3至10,以及n > 10的体相部分),从而对漏斗效应和复合过程的复杂性提供了全面的认识。我们发现,在光激发后,MAPbBr3纳米片中二阶和三阶过程占主导地位,这表明存在激子-激子湮灭(EEA)和俄歇复合。薄层中的长寿命激子(例如,n = 5,Eb = 136 meV)以t = 10–50 ps的时间尺度漏斗进入高n层,这使其激子结合能降低至kB T = 26 meV(T = 300K)以下,并导致辐射复合。并行和连续的漏斗效应与激子俘获过程相互竞争,使得当存在高质量n-n界面时,漏斗效应成为克服激子自俘获的极好工具。另一方面,高n区域中的自由电荷载流子促进辐射复合,并且EEA被绕过,这对于LED和激光应用而言是理想的。

英文摘要:

Quasi two-dimensional (2D) colloidal synthesis made quantum confinement readily accessible in perovskites, generating additional momentum in perovskite LED research and lasing. Ultrathin perovskite layers exhibit high exciton binding energies and beneficial charge transport properties interesting for solar cells. In 2D perovskites, the combination of layers with different thickness helps to direct charge carriers in a targeted manner toward thicker layers with a smaller bandgap. However, detailed knowledge about the mechanisms by which excitons and charge carriers funnel and recombine in these structures is lacking. Here, we characterize colloidal 2D methylammonium lead bromide (MAPbBr3) Ruddlesden-Popper perovskites with a broad combination of layers (n = 3 to 10, and bulk fractions with n > 10) in one stack by femtosecond transient absorption spectroscopy and time-resolved photoluminescence, which gives comprehensive insights into the complexity of funneling and recombination processes. We find that after photoexcitation second- and third-order processes dominate in MAPbBr3 nanosheets, which indicates exciton-exciton annihilation (EEA) and Auger recombination. Long-lived excitons in thin layers (e.g., n = 5, Eb = 136 meV) funnel into high n with t = 10-50 ps, which decreases their exciton binding energy below kB T = 26 meV ( T = 300K) and leads to radiative recombination. Parallel and consecutive funneling compete with exciton trapping processes, making funneling an excellent tool to overcome exciton self-trapping when high-quality n-n interfaces are present. Free charge carriers in high n regions on the other hand facilitate radiative recombination and EEA is bypassed, which is desirable for LED and lasing applications.

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