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arXiv 2408.01469cs.ETphysics.app-ph
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用于神经形态计算的固态氧离子突触晶体管

Solid-State Oxide-Ion Synaptic Transistor for Neuromorphic Computing

Philipp Langner, Francesco Chiabrera, Nerea Alayo, Paul Nizet, Luigi Morrone, Carlota Bozal-Ginesta, Alex Morata, Albert Tarancòn

AI总结:

本文提出一种以 Bi₂V₀.₉Cu₀.₁O₅.₃₅ 为电解质、La₀.₅Sr₀.₅FO₃₋δ 为沟道的全固态氧离子突触晶体管,具备低能耗、高耐久和线性对称可塑性,并在 MNIST 识别中达到 96% 准确率。

摘要:

神经形态硬件有助于人工智能神经网络模型实现快速且高能效的训练与运行。然而,忆阻器等现有模拟存内计算器件仍面临阻碍其商业化的重大挑战,其中包括由其随机特性导致的高差异性。微制造电化学突触基于确定性的离子嵌入机制充当模拟可编程电阻器,提供了一种有前景的方法。本研究开发了一种全固态氧离子突触晶体管,采用 Bi₂V₀.₉Cu₀.₁O₅.₃₅ 作为优异的氧离子导体电解质,并采用 La₀.₅Sr₀.₅FO₃₋δ 作为可变电阻沟道,能够在与传统电子器件兼容的温度下高效工作。该晶体管表现出长时程和短时程增强、双脉冲易化以及强直后增强等基本突触行为,模拟了生物神经网络的基础特性。其满足高效神经形态计算的关键标准,包括出色的线性和对称突触可塑性、每个编程脉冲的低能耗,以及周期差异极小的高耐久性。将所提出的突触晶体管集成到用于手写数字识别的人工神经网络(ANN)仿真中后,该器件在 MNIST 数据集上取得了 96% 的准确率,表明其在 ANN 中的有效实现。这些发现证明了基于氧离子的突触晶体管在依托离子电子学的模拟神经形态计算中有效应用的潜力。

英文摘要:

Neuromorphic hardware facilitates rapid and energy-efficient training and operation of neural network models for artificial intelligence. However, existing analog in-memory computing devices, like memristors, continue to face significant challenges that impede their commercialization. These challenges include high variability due to their stochastic nature. Microfabricated electrochemical synapses offer a promising approach by functioning as an analog programmable resistor based on deterministic ion-insertion mechanisms. Here, we developed an all-solid-state oxide-ion synaptic transistor employing $\text{Bi}_2\text{V}_{0.9}\text{Cu}_{0.1}\text{O}_{5.35}$ as a superior oxide-ion conductor electrolyte and $\text{La}_\text{0.5}\text{Sr}_\text{0.5}\text{F}\text{O}_\text{3-$δ$}$ as a variable resistance channel able to efficiently operate at temperatures compatible with conventional electronics. Our transistor exhibits essential synaptic behaviors such as long- and short-term potentiation, paired-pulse facilitation, and post-tetanic potentiation, mimicking fundamental properties of biological neural networks. Key criteria for efficient neuromorphic computing are satisfied, including excellent linear and symmetric synaptic plasticity, low energy consumption per programming pulse, and high endurance with minimal cycle-to-cycle variation. Integrated into an artificial neural network (ANN) simulation for handwritten digit recognition, the presented synaptic transistor achieved a 96% accuracy on the MNIST dataset, illustrating the effective implementation of our device in ANNs. These findings demonstrate the potential of oxide-ion based synaptic transistors for effective implementation in analog neuromorphic computing based on iontronics.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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