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arXiv 2408.01232cond-mat.mes-hallcond-mat.supr-con
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MnTe交错磁体候选材料的Andreev反射

Andreev reflection for MnTe altermagnet candidate

D. Yu. Kazmin, V. D. Esin, Yu. S. Barash, A. V. Timonina, N. N. Kolesnikov, E. V. Deviatov

AI总结:

实验研究了铟电极与MnTe交错磁体候选材料平面结的电子输运,在低温零磁场下观察到异常的Andreev反射,该现象由界面无序区域的特殊输运机制解释,且交错磁体受无序影响较小使电导增强得以保留。

摘要:

我们实验研究了铟电极与MnTe交错磁体候选材料之间单一平面结的电子输运。我们证实了在铟临界磁场或临界温度之上具有标准欧姆行为,电流-电压曲线严格呈线性,尽管结电阻很高,约为100 kOhm。在低温和零磁场下,我们观察到了发育良好的Andreev曲线,并具有显著的相干峰,这通常无法在如此高正常结电阻下预期。磁场下的抑制现象,以及所有研究样品中观察到的行为普适性,也支持了关于Andreev反射的结论。实验结果可以通过超导体-交错磁体界面处无序区域中Andreev输运的具体特性来解释。由于对Andreev反射可能性的限制条件不同,交错磁体受无序影响小于正常自旋简并金属,因此电导增强在整个超导能隙中均得以保留。

英文摘要:

We experimentally study electron transport across a single planar junction between the indium electrode and MnTe altermagnet candidate. We confirm standard Ohmic behavior with strictly linear current-voltage curves above the indium critical field or temperature, although with high, about 100~kOhm, junction resistance. At low temperatures and in zero magnetic field, we observe a well-developed Andreev curve with the pronounced coherence peaks, which cannot be normally expected for these high values of normal junction resistance. The conclusion on the Andreev reflection is also supported by suppression in magnetic field, as well as by universality of the observed behavior for all of the investigated samples. The experimental results can be explained by specifics of Andreev transport through the disordered region at the superconductor-altermagnet interface. Due to a different set of restrictions on the possibility of Andreev reflection, an altermagnet suffers from the presence of disorder less than a normal spin-degenerate metal, so the conductance enhancement is retained throughout the superconducting gap.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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