Purcell-enhanced single-photon emission from InAs/GaAs quantum dots coupled to broadband cylindrical nanocavities
Abhiroop Chellu, Subhajit Bej, Hanna Wahl, Hermann Kahle, Topi Uusitalo, Roosa Hytönen, Heikki Rekola, Jouko Lang, Eva Schöll, Lukas Hanschke, Patricia Kallert,… 展开作者
Abhiroop Chellu, Subhajit Bej, Hanna Wahl, Hermann Kahle, Topi Uusitalo, Roosa Hytönen, Heikki Rekola, Jouko Lang, Eva Schöll, Lukas Hanschke, Patricia Kallert, Tobias Kipp, Christian Strelow, Marjukka Tuominen, Klaus D. Jöns, Petri Karvinen, Tapio Niemi, Mircea Guina, Teemu Hakkarainen
备注：
v2: Minor changes have been made to the manuscript after v1: Title has been modified. Reference number 42 and 62 updated. The manuscript has been edited to improve the general readability of the text v3: A comprehensive discussion on the collection efficiency of this QD-cavity source has been added in the "Discussions" section of the manuscript. Figure 1 and Figure 6 have been updated
On-chip emitters that can generate single and entangled photons are essential building blocks for developing photonic quantum information processing technologies in a scalable fashion. Semiconductor quantum dots (QDs) are attractive candidates that emit high-quality quantum states of light on demand, however at a rate limited by their spontaneous radiative lifetime. In this study, we utilize the Purcell effect to demonstrate up to a 38-fold enhancement in the emission rate of InAs QDs by coupling them to metal-clad GaAs nanopillars. These cavities, featuring a sub-wavelength mode volume of 4.5x10-4 (λ/n)3 and low quality factor of 62, enable Purcell-enhanced single-photon emission across a large bandwidth of 15 nm. The broadband nature of the cavity eliminates the need for implementing tuning mechanisms typically required to achieve QD-cavity resonance, thus relaxing fabrication constraints. Ultimately, this QD-cavity architecture represents a significant stride towards developing solid-state quantum emitters generating near-ideal single-photon states at GHz-level repetition rates.
Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects such as erbium suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Many of the traditional hosts for erbium ions are not amenable to direct incorporation with existing integrated photonics platforms, limiting scalable fabrication of qubit-based devices. Here we present a scalable approach towards CMOS-compatible telecom qubits by us…
Optically-active spin systems coupled to photonic cavities with high cooperativity can generate strong light-matter interactions, a key ingredient in quantum networks. But obtaining high cooperativities for quantum information processing often involves the use of photonic crystal cavities that feature a poor optical access from the free space, especially to circularly polarized light required for the coherent control of the spin. Here, we demonstrate coupling with cooperativity as high as $8$ of an InAs/GaAs quantum dot to a fabricated bullseye cavity that provides nearly degenerate and Gaussi…
Nanoscale semiconductor lasers have been developed recently using either metal, metallo-dielectric or photonic crystal nanocavities. While the technology of nanolasers is steadily being deployed, their expected performance for on-chip optical interconnects is still largely unknown due to a limited understanding of some of their key features. Specifically, as the cavity size is reduced with respect to the emission wavelength, the stimulated and the spontaneous emission rates are modified, which is known as the Purcell effect in the context of cavity quantum electrodynamics. This effect is expec…
High Purcell-enhancement in quantum-dot hybrid circular Bragg grating cavities for GHz-clockrate generation of indistinguishable photons
Technische Universität Berlin（柏林工业大学）；Institute of Semiconductors, Chinese Academy of Sciences（中国科学院半导体研究所）；University of Chinese Academy of Sciences（中国科学院大学）
A circular dielectric grating for vertical extraction of single quantum dot emission
我们展示了一个纳米结构组成的部分蚀刻环形沟槽在悬浮的GaAs膜，设计用于有效和适度的宽带（约1000毫米）。5nm）的发射提取。模拟表明，嵌入纳米结构中心的偶极子以接近高斯的远场向上辐射到自由空间中，允许收集效率> 80%，具有高数值孔径（NA=0.7）光学器件，并且具有12 X Purcell辐射率增强。制造的器械显示出约10%的光子收集效率，NA=0.42物镜，比未图案化GaAs中的量子点提高20倍。四倍激子寿命减少表明适度的Purcell增强。
Silicon carbide is evolving as a prominent solid-state platform for the realization of quantum information processing hardware. Angle-etched nanodevices are emerging as a solution to photonic integration in bulk substrates where color centers are best defined. We model triangular cross-section waveguides and photonic crystal cavities using Finite-Difference Time-Domain and Finite-Difference Eigensolver approaches. We analyze optimal color center positioning within the modes of these devices and provide estimates on achievable Purcell enhancement in nanocavities with applications in quantum com…
Several emission features mark semiconductor quantum dots as promising non-classical light sources for prospective quantum implementations. For long-distance transmission [1] and Si-based on-chip processing[2, 3], the possibility to match the telecom C-band [4] stands out, while source brightness and high single-photon purity are key features in virtually any quantum implementation [5, 6]. Here we present an InAs/InGaAs/GaAs quantum dot emitting in the telecom C-band coupled to a circular Bragg grating. The Purcell enhancement of the emission enables a simultaneously high brightness with a fib…
Despite tremendous advances in the fundamentals and applications of cavity quantum electrodynamics (CQED), investigations in this field have primarily been limited to optical cavities composed of purely dielectric materials. Here, we demonstrate a hybrid metal-dielectric nanocavity design and realize it in the InAs/GaAs quantum photonics platform utilizing angled rotational metal evaporation. Key features of our nanometallic light-matter interface include: (i) order of magnitude reduction in mode volume compared to that of leading photonic crystal CQED systems; (ii) surface-emitting nanoscale …
Scalable quantum photonic architectures demand highly efficient, high-purity single-photon sources, which can be frequency matched via external tuning. We demonstrate a single-photon source based on an InAs quantum dot embedded in a micropillar resonator, which is frequency tunable via externally-applied stress. Our platform combines the advantages of a Bragg micropillar cavity and the piezo-strain-tuning technique enabling single photon spontaneous emission enhancement via the Purcell effect and quantum dot (QD) with tunable wavelength. Our optomechanical platform has been implemented by inte…
Deterministic single-photon source with on-chip 5.6 GHz acoustic clock
Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V.（柏林莱布尼茨固体电子学保罗·德鲁德研究所）；Department of Physics, University of Colorado, Boulder（科罗拉多大学博尔德分校物理系）；National Institute of Standards and Technology（美国国家标准与技术研究院）
A Si-on-SiC Platform for Interfacing with Vanadium Dopants in the Telecom O-Band
Q-NEXT, Argonne National Laboratory（Q-NEXT，阿贡国家实验室）；Pritzker School of Molecular Engineering, University of Chicago（芝加哥大学普里茨克分子工程学院）；Material Science Division, Argonne National Laboratory（阿贡国家实验室材料科学部）；Center for Nanoscale Materials, Argonne National Laboratory（阿贡国家实验室纳米材料中心）
Semiconductor quantum dots embedded in hybrid circular Bragg gratings are a promising platform for the efficient generation of nonclassical light. The scalable fabrication of multiple devices with similar performance is highly desirable for their practical use as sources of single and entangled photons, while the ability to operate at telecom wavelength is essential for their integration with the existing fiber infrastructure. In this work we combine the promising properties of broadband hybrid circular Bragg gratings with a membrane-transfer process performed on 3" wafer scale. We develop and…
Long-distance quantum communication relies on the ability to efficiently generate and prepare single photons at telecom wavelengths. In many applications these photons must also be indistinguishable such that they exhibit interference on a beamsplitter, which implements effective photon-photon interactions. However, deterministic generation of indistinguishable single photons with high brightness remains a challenging problem. We demonstrate two-photon interference at telecom wavelengths using an InAs/InP quantum dot in a nanophotonic cavity. The cavity enhances the quantum dot emission, resul…
