用于在电信O波段与钒掺杂剂接口的Si-on-SiC平台
A Si-on-SiC Platform for Interfacing with Vanadium Dopants in the Telecom O-Band
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中文总结 AI 辅助
本研究提出硅上碳化硅异质光子平台，通过硅纳米腔与钒掺杂剂耦合，实现电信O波段高效单光子发射，为量子网络节点提供可扩展接口。
中文摘要 AI 辅助
碳化硅（SiC）中的钒色心提供电信O波段发射、亚微秒光学寿命和秒级自旋弛豫时间，使其成为量子网络节点的有前景候选。然而，从高折射率SiC宿主中高效提取光子仍然具有挑战性。在此，我们介绍一种硅上碳化硅异质光子平台，其中硅纳米腔与商业4H-SiC中的浅层钒掺杂剂倏逝耦合，实现共振激发下高效零声子线（ZPL）收集。在生长态集合中，我们观察到Purcell增强的光致发光，瞬态光谱烧孔线宽为50 MHz，时间尺度为微秒。在稀释注入样品中，我们分离出单个钒中心，具有高纯度单光子发射和Purcell增强的109 ns寿命。整个光学接口通过单透镜光纤操作，包括一个905 nm重泵浦激光器，以95%的效率恢复钒电荷态。这些结果确立了Si-on-SiC作为电信波长自旋-光子接口的可扩展、代工厂兼容平台。
英文摘要
Vanadium color centers in silicon carbide (SiC) offer telecom O-band emission, sub-microsecond optical lifetimes, and second-scale spin relaxation times, rendering them promising candidates for quantum network nodes. However, efficient photon extraction from the high-refractive-index SiC host remains challenging. Here, we introduce a silicon-on-SiC heterogeneous photonic platform in which silicon nanocavities evanescently couple to shallow vanadium dopants in commercial 4H-SiC, enabling efficient zero-phonon line (ZPL) collection under resonant excitation. In as-grown ensembles, we observe Purcell-enhanced photoluminescence with transient spectral hole burning linewidths of 50 MHz on microsecond timescales. In dilute implanted samples, we isolate individual vanadium centers with high-purity single photon emission and a Purcell-enhanced lifetime of 109 ns. The entire optical interface operates through a single lensed fiber, including a 905 nm repump laser that recovers the vanadium charge state with 95% efficiency. These results establish Si-on-SiC as a scalable, foundry-compatible platform for telecom-wavelength spin-photon interfaces.
发表机构
- Q-NEXT, Argonne National Laboratory（Q-NEXT，阿贡国家实验室）
- Pritzker School of Molecular Engineering, University of Chicago（芝加哥大学普里茨克分子工程学院）
- Material Science Division, Argonne National Laboratory（阿贡国家实验室材料科学部）
- Center for Nanoscale Materials, Argonne National Laboratory（阿贡国家实验室纳米材料中心）
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