室温下扭曲MoSe$_2$同质双层中间谷三子的电学操纵
Electrical manipulation of intervalley trions in twisted MoSe$_2$ homobilayers at room temperature
AI总结：
本工作研究了室温下扭曲MoSe$_2$同质双层器件中激子复合物的电学控制，利用栅极依赖的微光致发光光谱和密度泛函理论计算，揭示了由扭曲角决定的间谷杂化三子形成机制，为基于超薄半导体系统设计多功能光电器件开辟了新途径。
摘要：
过渡金属二硫属化物扭曲双层中间层和层间激子的出色物理特性和应用，使其成为探索通过电场操纵其光电特性的极具吸引力的平台。本工作研究了室温下扭曲MoSe$_2$同质双层器件中激子复合物的电学控制。栅极依赖的微光致发光光谱揭示了源自激子复合物发射的数meV的能量可调谐性。此外，我们通过制造堆叠角为$θ\sim1\degree$、$θ\sim4\degree$和$θ\sim18\degree$的器件，研究了谷性质的扭曲角依赖性。在密度泛函理论计算的支持下，结果表明，根据扭曲角的不同，导带极小值和\textbf{Q}点处的杂化态促进了涉及导带中\textbf{Q}点和\textbf{K}点以及价带中\textbf{K}点的间谷杂化三子的形成。通过揭示扭曲同质双层中激子种类的栅极控制，我们的发现为基于超薄半导体系统设计多功能光电器件开辟了新途径。
英文摘要：
The impressive physics and applications of intra- and interlayer excitons in a transition metal dichalcogenide twisted-bilayer make these systems compelling platforms for exploring the manipulation of their optoelectronic properties through electrical fields. This work studies the electrical control of excitonic complexes in twisted MoSe$_2$ homobilayer devices at room temperature. Gate-dependent micro-photoluminescence spectroscopy reveals an energy tunability of several meVs originating from the emission of excitonic complexes. Furthermore, our study investigates the twist-angle dependence of valley properties by fabricating devices with stacking angles of $θ\sim1\degree$, $θ\sim4\degree$ and $θ\sim18\degree$. Strengthened by density functional theory calculations, the results suggest that, depending on the twist angle, the conduction band minima and hybridized states at the \textbf{Q}-point promote the formation of intervalley hybrid trions involving the \textbf{Q}-and \textbf{K}-points in the conduction band and the \textbf{K}-point in the valence band. By revealing the gate control of exciton species in twisted homobilayers, our findings open new avenues for engineering multifunctional optoelectronic devices based on ultrathin semiconducting systems.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
