We investigate the effect of Coulomb drag resistance in a bilayer system of strongly correlated electron liquids magnetized by an in-plane field employing the framework of hydrodynamic theory. We identify a mechanism for drag magnetoresistance, which physically arises from the spin diffusion driven by fluctuations of the spin currents within a partially spin-polarized fluid. This effect is further enhanced by acoustic and optic plasmon resonances within the bilayer, where hydrodynamic plasmons are driven by fluctuating viscous stresses. We express the drag magnetoresistivity in terms of the intrinsic dissipative coefficients and basic thermodynamic properties of the electron fluid. Our results are derived nonperturbatively in interaction strength and do not rely on assuming Fermi-liquid behavior of the electron liquid, and applicable also in the regimes of semiquantum and highly correlated classical fluids.
Contact effects on transport in magnetite, an archetypal correlated transition metal oxide
多端测量通常被用来检查强相关的电子材料，如过渡金属氧化物的电子性质，而不受接触效应的影响。相比之下，在这项工作中，我们调查的界面性质的Fe $_3$ O $_4$与不同的金属，与接触效应提供了一个窗口的相关氧化物中的物理工作。接触电阻通过四端电气测量作为电源电压和温度的函数来确定。接触电阻随电极金属$ϕ(M)$、$M=$ Cu、Au和Pt的功函数而系统地变化，功函数越高，接触电阻越低。这种趋势和接触电阻与Fe $_3$ O $_4$电阻率成正比的观察结果与将氧化物建模为具有跳跃传输的有效$p$型半导体一致。在偏置驱动的绝缘体-金属转变处的接触电阻值的跳跃具有与$ϕ$（$M$）类似的趋势，与通过电场的电荷间隙闭合的转变机制一致。
Anisotropic Surface State Band Splitting and Low Energy Flat Bands in 3d Correlated Topological Kondo Insulator Candidate FeSb$_2$
National Laboratory for Superconductivity, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences（中国科学院物理研究所）；University of Chinese Academy of Sciences（中国科学院大学）；Technical Institute of Physics and Chemistry, Chinese Academy of Sciences（中国科学院理化技术研究所）
Anomalous Hall Resistance in Bilayer Quantum Hall Systems
本文在非对易几何的基础上提出了双层量子霍尔系统中霍尔电流的微观理论。通过对海森堡运动方程和电荷连续性方程的分析，论证了在层间相位相干自发发展的系统中，相流的出现。相电流的安排本身，以尽量减少系统的总能量，诱导某些异常行为的霍尔电流在逆流的几何形状，也在拖动实验。它们解释了最近Kellogg等人[M. Kellogg，I. B. Spielman，J.P. Eisenstein，L.N. Pfeiffer和K.W. West，Phys. Rev. Lett. \textbf{88}（2002）126804; M. Kellogg，J.P. Eisenstein，L.N. Pfeiffer和K.W. West，Phys. Rev. Lett. \textbf{93}（2004）036801]和Tutuc等人[E. Tutuc，M. Shayegan和D.A. Huse，Phys. Rev. Lett. \textbf{93}（2004）036802]在$ν=1$。
Measuring Hall voltage and Hall resistance in an atom-based quantum simulator
University of Florence（佛罗伦萨大学）；European Laboratory for Non-Linear Spectroscopy (LENS)（欧洲非线性光谱学实验室 (LENS)）；Université Grenoble Alpes（格勒诺布尔阿尔卑斯大学）；CNRS（法国国家科学研究中心）；University of Geneva（日内瓦大学）
RG Dynamics of Irrelevant Fermion Operators and the Drag Coupling Mechanism
Universitat de Barcelona（巴塞罗那大学）；Universidad de Oviedo（奥维耶多大学）；Instituto Universitario de Ciencias y Tecnologías Espaciales de Asturias (ICTEA)（阿斯图里亚斯宇宙科学与技术大学研究所）；Institució Catalana de Recerca i Estudis Avançats (ICREA)（加泰罗尼亚高级研究学院）
Correlated interlayer quantum Hall state in large-angle twisted trilayer graphene
Daegu Gyeongbuk Institute of Science and Technology (DGIST)（大邱庆北科学技术院）；Ulsan National Institute of Science and Technology（蔚山科学技术院）；University of Seoul（首尔大学）；Pohang University of Science and Technology（浦项科技大学）；National Institute for Materials Science（物质材料研究机构）；Korea Advanced Institute of Science and Technology（韩国科学技术院）；Institute for Basic Science（基础科学研究所）
