临界无序超薄CNi3薄膜中反常霍尔效应的饱和
Saturation of the Anomalous Hall Effect in Critically Disordered Ultra-thin CNi3 Films
摘要：
我们证明了一个明显的高无序异常霍尔效应阶段出现在相关的绝缘体阈值的超薄，非晶，铁磁CNi 3薄膜。在弱定域区，当薄层电导G >> e^2/h时，薄膜的反常霍尔电阻随无序度的增加而增加，霍尔电导的尺度为Gxy ~ G ^[1.6]。然而，在足够高的无序度下，系统开始进入2D相关绝缘体状态，此时霍尔电阻Rxy突然饱和，标度指数变为2。隧道测量表明，饱和的行为是相称的出现的二维库仑隙，这表明，电子-电子相互作用介导的高度无序相。
英文摘要：
We demonstrate that a distinct high-disorder anomalous Hall effect phase emerges at the correlated insulator threshold of ultra-thin, amorphous, ferromagnetic CNi3 films. In the weak localization regime, where the sheet conductance G >> e^2/h, the anomalous Hall resistance of the films increases with increasing disorder and the Hall conductance scales as Gxy ~ G^1.6. However, at sufficiently high disorder the system begins to enter the 2D correlated insulator regime, at which point the Hall resistance Rxy abruptly saturates and the scaling exponent becomes 2. Tunneling measurements show that the saturation behavior is commensurate with the emergence of the 2D Coulomb gap, suggesting that e-e interactions mediate the high-disorder phase.
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