We present a broad study of charge and heat transport in a mesoscopic system where one or several quantum Hall edge channels are strongly coupled to a floating Ohmic contact (OC). It is well known that charge-current fluctuations emanating from the OC along the edge channels are highly susceptible to the OC charge capacitance in the heat Coulomb blockade regime (an impeded ability of the OC to equilibrate edge channels). Here, we demonstrate how potential- and temperature fluctuations due to finite OC charge and heat capacities impact the heat-current fluctuations emitted from the OC. First, by assuming an infinite OC heat capacity, we show that the output heat-current noise is strongly dependent on the OC charge capacitance, following from a close relation between one-dimensional charge- and heat currents. When also the OC heat capacity is finite, an interplay of potential- and temperature fluctuations influences the heat transport. Concretely, we find that the effect of the charge capacitance on heat transport manifests in terms of a strongly increased energy relaxation time in the heat Coulomb blockade regime. Furthermore, we find expressions for a broad set of output observables, such as charge and heat auto- and cross correlations, as functions of input and OC fluctuations, depending on the relation between charge and energy relaxation times compared to the frequency of fluctuations and inverse (local) temperatures as well as on the number of edge channels attached to the OC. Finally, we show that a finite OC heat capacity transforms the full counting statistics of the output charge from Gaussian to non-Gaussian. Our findings provide novel opportunities to experimentally probe and harness the quantum nature of heat transport in strongly coupled electron circuits.
Above the Kondo temperature, the Kohn-Sham zero-bias conductance of an Anderson junction has been shown to completely miss the Coulomb blockade. Within a standard model for the spectral function, we deduce a parameterization for both the onsite exchange-correlation potential and the bias drop as a function of the site occupation that applies for all correlation strengths. We use our results to sow doubt on the common interpretation of such corrections as arising from dynamical exchange-correlation contributions.
We investigate theorerically the non-equilibrium transport through a molecular quantum dot as a function of gate and bias voltage, taking into account the typical situation in molecular electronics. In this respect, our study includes asymmetries both in the capacitances and tunneling rates to the source and drain electrodes, as well as an infinitely large charging energy on the molecule. Our calculations are based on the out-of-equilibrium Non-Crossing-Approximation (NCA), which is a reliable technique in the regime under consideration. We find that Coulomb blockade edges and Kondo peaks disp…
We performed electronic transport measurements on 1D InAs quantum wires. In sufficiently disordered wires, transport is dominated by Coulomb blockade, and the conductance can be well described by tunneling through a quantum dot embedded between two one-dimensional Luttinger liquid wires. In contrast to previous experiments in other material systems, in our system the conductance difference between peak to valley decreases with decreasing temperature for several consecutive peaks. This phenomenon is theoretically expected to occur only for strongly interacting systems with small Luttinger inter…
We develop the two-instanton approximation to the current-voltage characteristic of a single electron transistor within the Ambegaokar-Eckern-Schön model. We determine the temperature and gate voltage dependence of the Coulomb blockade oscillations of the conductance and the effective charge. We find that a small (in comparison with the charging energy) bias voltage leads to significant suppression of the Coulomb blockade oscillations and to appearance of the bias-dependent phase shift.
Motivated by the discovery of superconductivity in the infinite-layer nickelate family, we report an experimental endeavor to clean the surface of nickelate superconductor Pr0.8Sr0.2NiO2 films by Ar+ ion sputtering and subsequent annealing, and we study their electronic structures by cryogenic scanning tunneling microscopy and spectroscopy. The annealed surfaces are characterized by nano-sized clusters and Coulomb staircases with periodicity inversely proportional to the projected area of the nanoclusters, consistent with a double-barrier tunneling junction model. Moreover, the dynamical Coulo…
Physical properties of single-electron devices in the week Coulomb blockade regime are significantly dependent on non-perturbative effects. They arise as instanton solutions of equations of motion for the corresponding Ambegaokar-Eckern-Schoen action. In equilibrium those solutions are known as Korshunov instantons. In this paper we study non-equilibrium Ambegaokar-Eckern- Schoen action using Keldysh technique. We found instantons for the most general stationary out-of equilibrium state. We also found that action saddle-point value assumes a universal value irrespective of the stationary non-e…
We demonstrate experimentally a precise realization of Coulomb Blockade Thermometry (CBT) working at temperatures up to 60 K. Advances in nano fabrication methods using electron beam lithography allow us to fabricate a uniform arrays of sufficiently small tunnel junctions to guarantee an overall temperature reading uncertainty of about 1\%
A new field electron emission (FE) mechanism, which includes Coulomb blockade and quantum confinement effects, is revealed for heterostructured emitters composed of quantum dots and nanowires self-assembled at diamond nanotips. The total energy distributions of the emitted electrons show multiple peaks attributed to the discrete electronic states of the quantum-confined emitter with the corresponding energy levels oscillating as a function of the applied voltage due to the Coulomb blockade. The FE current-voltage characteristics exhibit a modified Coulomb staircase with additional steps becomi…
We develop a theory of the reversible switching of the magnetic state of the ferromagnet-insulator-normal metalferromagnet (FINF) nanostructure. The switching is controlled by tuning the Coulomb blockade strength via the gate voltage on the normal metal granule. The proposed mechanism allows for realizing the switching without passing a dissipative current through the structure.
A magnet with precessing magnetization pumps a spin current into adjacent leads. As a special case of this spin pumping, a precessing macrospin (magnetization) can assist electrons in tunneling. In small systems, however, the Coulomb blockade effect can block the transport of electrons. Here, we investigate the competition between macrospin-assisted tunneling and Coulomb blockade for the simplest system where both effects meet; namely, for a single tunnel junction between a normal metal and a metallic ferromagnet with precessing magnetization. By combining Fermi's golden rule with magnetizatio…
We report the observation of Coulomb blockade in field electron emission (FE) from single-wall carbon nanotubes (SWCNTs), which is manifested as pronounced steps in the FE current-voltage curves and oscillatory variations in the energy distribution of emitted electrons. The appearance of the Coulomb blockade is explained by the formation of nanoscale protrusions at the apexes of SWCNTs due to the electric field-assisted surface diffusion of adsorbates and carbon adatoms. The proposed adsorbate-assisted FE mechanism is substantially different from the well-known resonant tunneling associated wi…
We investigate temperature errors of Coulomb blockade thermometer (CBT) arising from inevitable non-uniformities in tunnel junction arrays. The errors are proportional to the junction resistance variance in the universal operation regime and this result holds approximately also beyond this originally studied high temperature range. We present both analytical and numerical results, and discuss briefly their implications on achievable uniformity based on state-of-the-art fabrication of sensors.
