Despite the widespread use of Scanning Transmission Electron Microscopy (STEM) for observing the structure of materials at the atomic scale, a detailed understanding of some relevant electron beam damage mechanisms is limited. Recent reports suggest that certain types of damage can be modeled as a diffusion process and that the accumulation effects of this process must be kept low in order to reduce damage. We therefore develop an explicit mathematical formulation of spatiotemporal diffusion processes in STEM that take into account both instrument and sample parameters. Furthermore, our framework can aid the design of Diffusion Controlled Sampling (DCS) strategies using optimally selected probe positions in STEM, that constrain the cumulative diffusion distribution. Numerical simulations highlight the variability of the cumulative diffusion distribution for different experimental STEM configurations. These analytical and numerical frameworks can subsequently be used for careful design of 2- and 4-dimensional STEM experiments where beam damage is minimised.
Reducing electron beam damage through alternative STEM scanning strategies. Part II -- Attempt towards an empirical model describing the damage process
Mapping electron beam-induced radiolytic damage in molecular crystals
National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory（劳伦斯伯克利国家实验室分子发现中心电子显微镜国家中心）；California NanoSystems Institute, University of California, Los Angeles（加州大学洛杉矶分校加州纳米系统研究所）；Molecular Biophysics and Integrated Bioimaging Division, Lawrence Berkeley National Laboratory（劳伦斯伯克利国家实验室分子生物物理与综合成像部）；Department of Chemistry and Biochemistry, University of California, Los Angeles（加州大学洛杉矶分校化学与生物化学系）；UCLA–DOE Institute for Genomics and Proteomics, University of California, Los Angeles（加州大学洛杉矶分校 UCLA-能源部基因组与蛋白质组学研究所）
Diffusion-controlled Alloying of Single-phase Multi-principal Covalent Transition Metal Carbides with Enhanced Damage tolerance and Exceptional Thermal Properties
Improvement of a focused ion beam fabricated diamond pillar for scanning ensemble nitrogen-vacancy magnetometry probe using an ultrapure diamond
School of Materials Science, Japan Advanced Institute of Science and Technology（日本科学技术高级学院材料科学学院）；National Institute of Advanced Industrial Science and Technology (AIST)（国立产业技术综合研究所）
Cumulative X-ray Damage in Bismuth Selenide Examined by Simultaneous TXM and XRD
Stanford University（斯坦福大学）；SLAC National Accelerator Laboratory（SLAC国家加速器实验室）；PULSE Institute（脉冲研究所）；Lawrence Livermore National Laboratory（劳伦斯利弗莫尔国家实验室）；Pohang Accelerator Laboratory（浦项加速器实验室）；Pohang University of Science and Technology（浦项科技大学）；European Radiation Synchrotron Facility（欧洲辐射同步辐射装置）；Nevada National Security Site（内华达国家安全区）；Sogang University（西江大学）
Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experiments
纳米探针X射线衍射（nXRD）是一种利用聚焦同步辐射来研究单个半导体纳米线结构特性的强有力的技术。然而，当在环境条件下进行实验时，所需的高X射线剂量和延长的暴露时间可导致辐射损伤。为了揭示辐射损伤的起源，我们比较了在第三代源PETRA III的P08光束线的微焦点站在环境条件下和在He气氛下对单个半导体纳米线的生长几何形状进行的nXRD实验。使用9 keV的入射X射线束能量和10 $^{10}$ s $^{-1}$的光子通量，通过在几个小时内连续记录在固定空间位置处的111布拉格反射的倒易空间图来监测单个GaAs/In $_{0.2}$ Ga $_{0.8}$ As/GaAs核-壳纳米线的轴向晶格参数和倾斜。此外，（In，Ga）As量子阱的发射特性，暴露的纳米线的原子组成和纳米线的形态进行了研究，分别通过阴极发光光谱，能量色散X射线光谱和扫描电子显微镜，无论是之前和之后的nXRD曝光。暴露在环境条件下的纳米线显示出严重的光学和形态学损伤，这是减少暴露在He气氛下的纳米线。所观察到的损伤可以在很大程度上归因于空气中X射线引起的臭氧反应的氧化过程。由于与GaAs相比较低的传热系数，该氧化物壳限制了通过纳米线侧刻面的传热，这被认为是生长几何形状中纳米线散热的主要通道。
Machine Learning-Based Reward-Driven Tuning of Scanning Probe Microscopy: Towards Fully Automated Microscopy
University of Tennessee（田纳西大学）；Oxford Instruments Asylum Research（牛津仪器庇护研究公司）；Pacific Northwest National Laboratory（太平洋西北国家实验室）；National Cheng Kung University（国立成功大学）；University of Duisburg-Essen（杜伊斯堡-埃森大学）
