通过 Cr3+ 掺杂调控 Zn2SiO4: Mn2+ 纳米荧光粉的陷阱性质以用于光学信息存储
Modulating trap properties by Cr3+-doping in Zn2SiO4: Mn2+ nano phosphor for optical information storage
AI总结：
本文采用溶液燃烧法制备 Cr3+ 共掺杂的 Zn2SiO4: Mn2+ 纳米荧光粉，通过陷阱深度工程获得1.05 eV合适陷阱，并验证其275 nm写入、980 nm读取的光学信息存储应用潜力。
摘要：
光激励发光材料是下一代光学信息存储技术最具吸引力的替代选择之一。然而，在为光学信息存储用发光材料调控合适能级方面仍存在一些挑战。本文首次通过溶液燃烧法及随后在1000摄氏度下热处理2小时，制备了一种陷阱深度为1.05 eV、满足光学信息存储要求的绿色发射纳米荧光粉 Zn2SiO4: Cr3+, Mn2+。系统研究了 Zn2SiO4: xCr3+, yMn2+ 的晶体结构、微观形貌、光致发光（PL）、光致发光激发（PLE）和余辉性质。采用陷阱深度工程策略，在将 Cr3+ 离子引入 Zn2SiO4: Mn2+ 后，观察到具有合适陷阱深度的高陷阱密度。通过初始上升（IR）方法进行热释光（TL）发光曲线分析，以深入了解陷阱信息。作为应用验证，实验中选择275 nm光照进行信息写入、980 nm近红外（NIR）激发进行信息读取，实现了信息存储。结果表明，Zn2SiO4: Cr3+, Mn2+ 荧光粉在光学信息存储领域具有潜在应用前景。
英文摘要：
Photo stimulated luminescent materials are one of the most attractive alternatives for next generation optical information storage technologies. However, there are still some challenges in regulating appropriate energy levels in luminescent materials for optical information storage. Herein, a green emission nanophosphor Zn2SiO4: Cr3+, Mn2+ with the trap depth of 1.05 eV, fulfilling the requirements for optical information storage, was fabricated for the first time through the solution combustion method and subsequent heat treatment at 1000 degree centigrade for 2h. The crystal structure, micromorphology, photoluminescence (PL), photoluminescence excitation (PLE), and afterglow properties of Zn2SiO4: xCr3+, yMn2+ were studied systematically. By applying the strategy of trap depth engineering, high trap density with proper trap depth was observed when Cr3+ ions were introduced into Zn2SiO4: Mn2+. Thermoluminescence (TL) glow curve analysis through the initial rise (IR) method was conducted to gain some insight into the information of traps. As proof of application, information storage was experimentally achieved by choosing 275 nm illumination for information writing and 980 nm NIR excitation for information reading. The results indicate that Zn2SiO4: Cr3+, Mn2+ phosphor holds promise for potential applications in the field of optical information storage.
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