Mid-infrared spectrum is a critical tool for chemical analysis, industrial inspection, environment, and other fields due to its rich chemical bond information. However, the complicated growth or fabrication procedures of existing mid-infrared sensitive materials hinder the large-scale production and utilization of mid-infrared detectors. To address this issue, we developed Si:S barrier detectors employing sulfur doped silicon and a sophisticated band barrier design. Since the transport of dark current and photo current is separated, the barrier design effectively suppresses the dark current while allowing the photo current to leverage gain mechanisms, thereby substantially improving signal-to-noise ratio. As a result, the detector exhibits an infrared response range covering from 1.12 to 4.4μm with a peak at 3.3μm, excluding its intrinsic response in visible range. Its peak quantum efficiency surpasses that of the best mid-infrared silicon-based detector reported to date by an order of magnitude, reaching 2% at room temperature. The peak detectivity at 90K is 1.4E11 Jones @1.4V and decreases to 4.4E9 Jones @1.4V, 210K, comparable to the typical III-V and IV-VI photodetectors at one thousandth fabrication cost. Leveraging the well-established silicon-based manufacturing process, this device holds promise for large-scale production at a reduced price, offering a cost-effective solution for future mid-infrared detection.
Ultra-broadband Mid to Long-wave Infrared Spintronic Poisson Bolometer
Elmore Family School of Electrical and Computer Engineering, Purdue University（普渡大学埃尔莫电气与计算机工程学院）；Birck Nanotechnology Center, Purdue University（普渡大学伯克纳米技术中心）；Department of Materials Engineering, Indian Institute of Science（印度科学学院材料工程系）；School of Mechanical Engineering, Purdue University（普渡大学机械工程学院）
Broadband Optical Modulation and Control at Millikelvin Temperatures
SLAC National Accelerator Laboratory（SLAC国家加速器实验室）；Kavli Institute for Particle Astrophysics and Cosmology, Stanford University（斯坦福大学卡弗里粒子天体物理与宇宙学研究所）；Fermi National Accelerator Laboratory, Center for Particle Astrophysics（费米国家加速器实验室粒子天体物理中心）；Santa Clara University（圣克拉拉大学）
Above room temperature multiferroic tunnel junction with the altermagnetic metal CrSb
Huazhong University of Science and Technology（华中科技大学）；Florida State University（佛罗里达州立大学）；National High Magnetic Field Laboratory（国家强磁场实验室）；Charles University（查理大学）
