arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2109.07099physics.opticscs.ETphysics.app-ph
收藏

室温下自供电InP纳米线光电探测器的单光子探测

Self-powered InP Nanowire Photodetector for Single Photon Level Detection at Room Temperature

Yi Zhu, Vidur Raj, Ziyuan Li, Hark Hoe Tan, Chennupati Jagadish, Lan Fu

摘要:

具有单光子水平检测的高灵敏度光电探测器是一系列新兴技术的关键部件之一,特别是不断增长的光通信、遥感和量子计算领域。目前,大多数单光子探测技术需要在高电压下的外部偏置和/或冷却到低温,这对更广泛的应用造成了很大的限制。在这里,我们展示了InP纳米线阵列光电探测器,可以在室温下实现单光子水平的光检测,而无需外部偏置。我们使用自上而下蚀刻的重掺杂p型InP纳米线和n型AZO/ZnO载流子选择性接触来形成径向pn结,在0 V下具有超过3 × 10^5 V/cm的内建电场。该器件具有宽带光敏性,并且可以在0 V下区分每个脉冲的单个光子和暗噪声,通过其设计能够实现接近理想的宽带吸收,极低的暗电流,和高效的载流子分离。同时,该器件的带宽达到600 MHz以上,定时抖动为538 ps。所提出的设备设计提供了一个新的途径,低成本,高灵敏度,自供电的光电探测器为许多未来的应用。

英文摘要:

Highly sensitive photodetectors with single photon level detection is one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing. Currently, most of the single-photon detection technologies require external biasing at high voltages and/or cooling to low temperatures, posing great limitations for wider applications. Here, we demonstrate InP nanowire array photodetectors that can achieve single-photon level light detection at room temperature without an external bias. We use top-down etched, heavily doped p-type InP nanowires and n-type AZO/ZnO carrier selective contact to form a radial p-n junction with a built-in electric field exceeding 3x10^5 V/cm at 0 V. The device exhibits broadband light sensitivity and can distinguish a single photon per pulse from the dark noise at 0 V, enabled by its design to realize near-ideal broadband absorption, extremely low dark current, and highly efficient charge carrier separation. Meanwhile, the bandwidth of the device reaches above 600 MHz with a timing jitter of 538 ps. The proposed device design provides a new pathway towards low-cost, high-sensitivity, self-powered photodetectors for numerous future applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑