六方氮化硼中量子发射体的电子束重构
Electron Beam Restructuring of Quantum Emitters in Hexagonal Boron Nitride
AI总结：
本研究针对六方氮化硼中B中心量子发射体生成机制不明、方法稳定性差且仅适用于厚薄片的问题，通过原位时间分辨阴极发光光谱探究生成动力学，优化工艺后在8 nm薄片中制备出该发射体，阐明了重构机制。
摘要：
六方氮化硼（hBN）作为一种固态范德华宿主材料，有望承载用于片上量子光子学的单光子发射体。在436 nm波长处发光的B中心缺陷尤为受关注，因为它可通过电子束辐照生成。然而，该发射体的生成机制尚不明确，该方法的稳定性参差不齐，且此前仅成功应用于厚度远大于10 nm的hBN薄片。本研究采用原位时间分辨阴极发光（CL）光谱技术，探究B中心的生成动力学。研究发现，B中心的生成伴随着~305 nm处碳相关发光的猝灭，且两个过程均受hBN晶格中缺陷的电迁移速率限制。我们明确了限制该发射体制备方法有效性与可重复性的问题，并通过优化电子束参数结合hBN的前后处理工艺解决了这些问题。我们在厚度薄至8 nm的hBN薄片中成功制备出B中心量子发射体，阐明了hBN中量子发射体电子束重构的相关机制，并为确定B中心量子发射体的原子结构提供了思路。
英文摘要：
Hexagonal boron nitride (hBN) holds promise as a solid state, van der Waals host of single photon emitters for on-chip quantum photonics. The B-centre defect emitting at 436 nm is particularly compelling as it can be generated by electron beam irradiation. However, the emitter generation mechanism is unknown, the robustness of the method is variable, and it has only been applied successfully to thick flakes of hBN (>> 10 nm). Here, we use in-situ time-resolved cathodoluminescence (CL) spectroscopy to investigate the kinetics of B-centre generation. We show that the generation of B-centres is accompanied by quenching of a carbon-related emission at ~305 nm and that both processes are rate-limited by electromigration of defects in the hBN lattice. We identify problems that limit the efficacy and reproducibility of the emitter generation method, and solve them using a combination of optimized electron beam parameters and hBN pre- and post-processing treatments. We achieve B-centre quantum emitters in hBN flakes as thin as 8 nm, elucidate the mechanisms responsible for electron beam restructuring of quantum emitters in hBN, and gain insights towards identification of the atomic structure of the B-centre quantum emitter.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
