六方氮化硼单光子激发的光致变色效应
Photochromism in a Hexagonal Boron Nitride Single Photon Emitter
摘要：
固态单光子发射体（SPE），如六方氮化硼（hBN）中明亮、稳定的室温缺陷，在量子信息科学应用中越来越受到关注。到目前为止，在hBN中SPE的原子和电子起源还没有很好地理解，没有研究报告光致变色或探索hBN SPE之间的交叉相关性。在这里，我们结合照射时间依赖的量子效率和微光致发光（$μ$ PL）光谱与双色Hanbury布朗Twiss干涉法，使调查的电子结构的hBN缺陷。我们确定在hBN SPE的光致变色，表现出交叉相关和相关的量子效率之间的发射其两个零声子线。
英文摘要：
Solid-state single-photon emitters (SPEs) such as the bright, stable, room-temperature defects within hexagonal boron nitride (hBN) are of increasing interest for quantum information science applications. To date, the atomic and electronic origins of SPEs within hBN are not well understood, and no studies have reported photochromism or explored cross-correlations between hBN SPEs. Here, we combine irradiation-time dependent measures of quantum efficiency and microphotoluminescence ($μ$PL) spectroscopy with two-color Hanbury Brown-Twiss interferometry to enable an investigation of the electronic structure of hBN defects. We identify photochromism in a hBN SPE that exhibits cross-correlations and correlated quantum efficiencies between the emission of its two zero-phonon lines.
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