氟化物化学处理导致的超导铌薄膜中氢化物的形成及其微波损耗
Formation and Microwave Losses of Hydrides in Superconducting Niobium Thin Films Resulting from Fluoride Chemical Processing
AI总结：
本文系统研究了氟化物化学处理在超导Nb薄膜中诱导氢化物形成的机制及其对微波损耗的影响，揭示氢化物会损害超导性能并增加功率无关微波损耗，为优化量子器件相干时间提供指导。
摘要：
超导Nb薄膜因其在量子信息技术中的应用价值，近年来受到广泛关注。在Nb薄膜的加工过程中，通常使用氟化物基化学蚀刻剂来去除已知会对超导量子器件产生不利影响的表面氧化物。然而，这些蚀刻剂同样可能引入氢而形成Nb氢化物，从而可能对微波损耗性能产生负面影响。本文对Nb薄膜中经不同氟化物化学处理后形成的Nb氢化物进行了全面的材料表征。特别是，二次离子质谱、X射线散射和透射电子显微镜揭示了Nb氢化物的空间分布和相变过程。氢化物的形成速率由氟化物溶液的酸度和Nb2O5的蚀刻速率决定，其中Nb2O5充当氢进入Nb的扩散阻挡层。所形成的Nb氢化物对Nb的超导性能有害，并导致共面波导谐振器中与功率无关的微波损耗增加。然而，Nb氢化物与双能级系统损耗或器件老化机制之间不存在相关性。总体而言，本工作深入揭示了Nb氢化物的形成机制及其在微波损耗中的作用，从而为当前最大化超导量子器件相干时间的努力提供了指导。
英文摘要：
Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potentially negatively impacting microwave loss performance. Here, we present comprehensive materials characterization of Nb hydrides formed in Nb thin films as a function of fluoride chemical treatments. In particular, secondary-ion mass spectrometry, X-ray scattering, and transmission electron microscopy reveal the spatial distribution and phase transformation of Nb hydrides. The rate of hydride formation is determined by the fluoride solution acidity and the etch rate of Nb2O5, which acts as a diffusion barrier for hydrogen into Nb. The resulting Nb hydrides are detrimental to Nb superconducting properties and lead to increased power-independent microwave loss in coplanar waveguide resonators. However, Nb hydrides do not correlate with two-level system loss or device aging mechanisms. Overall, this work provides insight into the formation of Nb hydrides and their role in microwave loss, thus guiding ongoing efforts to maximize coherence time in superconducting quantum devices.
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