在6.5 GHz下品质因数为124的C波段碳化硅上铌酸锂SAW谐振器
C-Band Lithium Niobate on Silicon Carbide SAW Resonator With Figure-of-Merit of 124 at 6.5 GHz
AI总结：
本文提出SiC上薄膜LN的C波段SH-SAW谐振器，通过缩短波长、薄Al电极及LN/SiC波导约束，在6.5 GHz实现124的最高FoM并覆盖全C波段。
摘要：
在本工作中，我们基于碳化硅（SiC）平台上的薄膜铌酸锂（LN），展示了一种C波段剪切水平声表面波（SH-SAW）谐振器，其具有22%的高机电耦合（kt2）和565的品质因数（Q），特点是在6.5 GHz时具有124的优异品质因数（FoM = kt2*Q），这是该频率范围内报道的最高FoM。谐振器频率的提升通过波长（λ）减小和使用薄铝（Al）电极实现。LN/SiC波导与同步谐振器设计共同实现了有效的声能约束，从而获得高FoM，即使LN的归一化厚度接近0.5λ至1λ的尺度也是如此。为开展全面研究，我们还设计并制造了另外五个谐振器，在同一片500 nm厚、转移至SiC上的Y切薄膜LN中，将所研究的λ范围扩展到480至800 nm。所制造的SH-SAW谐振器工作在5至8 GHz，实验证明其kt2为20.3%至22.9%，Q为350至575，从而以优异性能覆盖整个C波段。
英文摘要：
In this work, we demonstrate a C-band shear-horizontal surface acoustic wave (SH-SAW) resonator with high electromechanical coupling (kt2) of 22% and a quality factor (Q) of 565 based on a thin-film lithium niobate (LN) on silicon carbide (SiC) platform, featuring an excellent figure-of-merit (FoM = kt2*Q ) of 124 at 6.5 GHz, the highest FoM reported in this frequency range. The resonator frequency upscaling is achieved through wavelength ($λ$) reduction and the use of thin aluminum (Al) electrodes. The LN/SiC waveguide and synchronous resonator design collectively enable effective acoustic energy confinement for a high FoM, even when the normalized thickness of LN approaches a scale of 0.5$λ$ to 1$λ$. To perform a comprehensive study, we also designed and fabricated five additional resonators, expending the $λ$ studied ranging from 480 to 800 nm, in the same 500 nm-thick transferred Y-cut thin-film LN on SiC. The fabricated SH-SAW resonators, operating from 5 to 8 GHz, experimentally demonstrate a kt2 from 20.3% to 22.9% and a Q from 350 to 575, thereby covering the entire C-band with excellent performance.
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