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arXiv 2402.04024cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con
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PbTe-In杂化物中增强的超导性

Enhanced superconductivity in PbTe-In hybrids

Zuhan Geng, Fangting Chen, Yichun Gao, Lining Yang, Yuhao Wang, Shuai Yang, Shan Zhang, Zonglin Li, Wenyu Song, Jiaye Xu, Zehao Yu, Ruidong Li, Zhaoyu Wang, Xia… 展开作者

Zuhan Geng, Fangting Chen, Yichun Gao, Lining Yang, Yuhao Wang, Shuai Yang, Shan Zhang, Zonglin Li, Wenyu Song, Jiaye Xu, Zehao Yu, Ruidong Li, Zhaoyu Wang, Xiao Feng, Tiantian Wang, Yunyi Zang, Lin Li, Runan Shang, Qi-Kun Xue, Ke He, Hao Zhang

AI总结:

本研究实现了PbTe纳米线上的外延铟薄膜,其超导能隙和临界温度较体铟显著增强,且有效g因子提升,约瑟夫森器件表现出门控可调超电流,为拓扑超导等奇异相提供可能。

摘要:

我们报道了在PbTe纳米线上外延铟薄膜的实现。该薄膜是连续的,并与PbTe形成原子级锐利的界面。隧道器件显示出硬超导能隙,其大小为1.08至1.18 meV,由于PbTe的存在,是体铟(约0.5 meV)的两倍。在PbTe衬底上的In的临界温度中也观察到类似的增强。亚能隙峰在有限磁场下出现。由于In的存在,有效g因子(15-45)与裸PbTe线(<10)相比显著增强,这与Al杂化物不同。约瑟夫森器件表现出门控可调的超电流。PbTe-In杂化物增强了In的超导性和PbTe的g因子这两种材料的性能,因此可能实现如拓扑超导等奇异物质相。

英文摘要:

We report the realization of epitaxial indium thin films on PbTe nanowires. The film is continuous and forms an atomically sharp interface with PbTe. Tunneling devices reveal a hard superconducting gap. The gap size, 1.08 to 1.18 meV, is twice as large as bulk indium's ($\sim$ 0.5 meV), due to the presence of PbTe. A similar enhancement is also observed in the critical temperature of In on a PbTe substrate. Subgap peaks appear at finite magnetic fields. The effective $g$-factor (15-45) is notably enhanced compared to bare PbTe wires ($<$ 10) due to the presence of In, differing from Al-hybrids. Josephson devices exhibit gate-tunable supercurrents. The PbTe-In hybrid enhances the properties of both, the superconductivity of In and g-factors of PbTe, and thus may enable exotic phases of matter such as topological superconductivity.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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