硅光存储器：通过 Si-SiO$_2$ 滞回效应实现非易失性光电存储器件
Silicon Optical Memory: Non-Volatile Optoelectronic Devices via Si-SiO$_2$ Hysteresis Effect
AI总结：
本文提出一种仅使用硅材料的新型光存储器，通过在硅-氧化硅界面引入滞回效应实现多级非易失性光数据存储，为标准硅代工工艺提供简单易行的光存储途径。
摘要：
实现片上非易失性光存储器一直是一个长期积极追求的目标，有望显著提升光子集成电路的能力和能效。在此，一种新型光存储器被展示，其仅使用半导体基础材料硅。通过操控该器件的光电效应，我们在硅-氧化硅界面引入了滞回效应，进而展示了具有稳健保持力和耐久性的多级非易失性光数据存储。这种新型硅光存储器提供了一条独特且简单易行的途径，以在标准硅代工工艺中实现光数据存储。
英文摘要：
Implementing on-chip non-volatile optical memories has long been an actively pursued goal, promising significant enhancements in the capability and energy efficiency of photonic integrated circuits. Here, a novel optical memory has been demonstrated exclusively using the semiconductor primary material, silicon. By manipulating the optoelectronic effect of this device, we introduce a hysteresis effect at the silicon-silicon oxide interface, which in turn demonstrates multi-level, non-volatile optical data storage with robust retention and endurance. This new silicon optical memory provides a distinctively simple and accessible route to realize optical data storage in standard silicon foundry processes.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
