基于忆阻等离子体隧道结的多级非易失性光电存储器
Multilevel nonvolatile optoelectronic memory based on memristive plasmonic tunnel junctions
摘要：
大脑中高效的信息处理是基于称为突触的处理和记忆组件，其输出取决于通过它们的信号的历史。在这里，我们开发了一种人工突触与电和光记忆效应使用反应隧道结等离子体纳米棒的基础上。在电子实现中，收集在低偏置电压下隧穿到等离子体纳米棒中的电子，以经由热电子介导的与环境的化学反应将信息写入隧道结中。在光学实现中，信息也可以通过外部光照射以激发等离子体纳米棒中的热电子来光学写入。所存储的信息是非易失性的，并且可以分别通过测量电阻或非弹性隧穿诱导的光发射以电学或光学方式在两种实现方式中读取。这些忆阻发光等离子体隧道结可以用作未来光电或神经形态信息系统中的存储器、逻辑单元或人工突触。
英文摘要：
Highly efficient information processing in brain is based on processing and memory components called synapses, whose output is dependent on the history of the signals passed through them. Here we have developed an artificial synapse with both electrical and optical memory effects using reactive tunnel junctions based on plasmonic nanorods. In an electronic realization, the electrons tunneled into plasmonic nanorods under low bias voltage are harvested to write information into the tunnel junctions via hot-electron-mediated chemical reactions with the environment. In an optical realization, the information can also be written optically by external light illumination to excite hot electrons in plasmonic nanorods. The stored information is non-volatile and can be read in both realizations either electrically or optically by measuring the resistance or inelastic-tunnelling-induced light emission, respectively. These memristive light-emitting plasmonic tunnel junctions can be used as memory, logic units or artificial synapses in future optoelectronic or neuromorphic information systems.
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