用于工艺监测的工况等离子体XPS：h-BN限制下氧化铜氢化的案例研究
Operando Plasma-XPS for Process Monitoring: Hydrogenation of Copper Oxide Confined Under h-BN Case Study
AI总结：
本研究利用APXPS技术实时监测了等离子体环境下h-BN覆盖的Cu氧化物的还原过程，发现H自由基能穿透h-BN层还原底层CuxO而保持h-BN完整，为h-BN封装器件的界面修复提供了实验依据。
摘要：
我们证明了环境压力X射线光电子能谱（APXPS）可用于等离子体环境中表面化学动态变化的原位研究。六方氮化硼（h-BN）因其具有广泛的独特化学、光学和电学性质，成为先进电子学的潜在材料，被用作本研究的模型系统。为了更好地理解等离子体辅助加工过程中h-BN的稳定性和表面化学，我们使用了通过化学气相沉积（CVD）生长的单层h-BN多晶Cu箔，并利用配备在13 Pa下运行的22 kHz 75 W放电等离子体源的APXPS，实时追踪了底层Cu氧化物的等离子体诱导还原过程。在等离子体XPS期间同时收集了残余气体分析（RGA）质谱，以追踪等离子体暴露期间形成的反应产物。观察到CuxO的明显还原，而h-BN层保持完整，表明H自由基可以攻击暴露的和h-BN覆盖的Cu氧化物斑块，并部分还原底层基底。除了对等离子体XPS能力的展示和讨论外，我们的结果表明，h-BN封装的金属Cu界面可以在不显著损坏覆盖的h-BN的情况下进行修复，这对于h-BN封装器件和界面的开发具有实际意义。
英文摘要：
We demonstrate that ambient pressure x-ray photoelectron spectroscopy (APXPS) can be used for in situ studies of dynamic changes in surface chemistry in a plasma environment. Hexagonal boron nitride (h-BN) was used in this study as a model system since it exhibits a wide array of unique chemical, optical, and electrical properties that make it a prospective material for advanced electronics. To better understand the stability and surface chemistry of h-BN during plasma-assisted processing, we used polycrystalline Cu foils with single-layer h-BN, grown via chemical vapor deposition (CVD), and tracked in real-time the plasma-induced reduction of the underlying Cu oxide using APXPS equipped with 22 kHz 75 W discharge plasma source operating at 13 Pa. Residual gas analysis (RGA) mass-spectra were concurrently collected during plasma-XPS to track reaction products formed during plasma exposure. A clear reduction of CuxO is seen, while an h-BN layer remains intact, suggesting H radical species can attack the exposed and h-BN-covered Cu oxide patches and partially reduce the underlying substrate. In addition to the demonstration and discussion of plasma-XPS capabilities, our results indicate the h-BN encapsulated metallic Cu interface might be repaired without significantly damaging the overlaying h-BN, which is of practical importance for the development of h-BN encapsulated devices and interfaces
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
