具有非易失性半浮栅的自供电可编程范德华光电探测器
Self-powered programmable van der Waals photodetectors with nonvolatile semi-floating gate
AI总结：
本文提出一种基于 MoTe2/hBN/graphene 的非易失性半浮栅光电探测器，可通过脉冲栅压在 n+-n 与 p-n 同质结间重构，实现自供电、快速、宽波段且正负光电流可调的高性能探测。
摘要：
可调谐光伏光电探测器在可编程和神经形态光电子领域具有重要意义。然而，其广泛应用受到复杂结构设计和能耗挑战的阻碍。本研究采用非易失性 MoTe2/hBN/graphene 半浮置光电探测器来解决这些问题。通过脉冲栅极电压编程，MoTe2 沟道可从 n+-n 同质结重构为 p-n 同质结，光电流转变也由负值变为正值。扫描光电流成像表明，负、正光电流分别归因于肖特基结和 p-n 同质结。在 p-n 构型下，该器件展现出自驱动、线性、快速响应（约3 ms）以及宽波段灵敏探测（405至1500 nm）的特性；在635 nm光照下，其典型响应度约为0.5 A/W，探测率约为1.6×10^12 Jones。这些优异的光电探测能力凸显了半浮置光电探测器作为推动逻辑和非易失性光电子发展的开创性方案的潜力。
英文摘要：
Tunable photovoltaic photodetectors are of significant relevance in the fields of programmable and neuromorphic optoelectronics. However, their widespread adoption is hindered by intricate architectural design and energy consumption challenges. This study employs a nonvolatile MoTe2/hBN/graphene semi-floating photodetector to address these issues. Programed with pulsed gate voltage, the MoTe2 channel can be reconfigured from an n+-n to a p-n homojunction, and the photocurrent transition changes from negative to positive values. Scanning photocurrent mapping reveals that the negative and positive photocurrents are attributed to Schottky junction and p-n homojunction, respectively. In the p-n configuration, the device demonstrates self-driven, linear, rapid response (~3 ms), and broadband sensitivity (from 405 to 1500 nm) for photodetection, with typical performances of responsivity at ~0.5 A/W and detectivity ~1.6*10^12 Jones under 635 nm illumination. These outstanding photodetection capabilities emphasize the potential of the semi-floating photodetector as a pioneering approach for advancing logical and nonvolatile optoelectronics.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
