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arXiv 2310.00751cond-mat.str-el
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利用高场转矩磁强计研究kagome金属ScV6Sn6的电子性质

Electronic properties of kagome metal ScV6Sn6 using high field torque magnetometry

Keshav Shrestha, Binod Regmi, Ganesh Pokharel, Seong-Gon Kim, Stephen D. Wilson, David E. Graf, Birendra A. Magar, Cole Phillips, Thinh Nguyen

AI总结:

该研究结合最高43 T高场转矩磁强计中的dHvA振荡与DFT计算,揭示ScV6Sn6的非平庸拓扑、CDW诱导Fermi面重构及其角度依赖。

摘要:

本工作利用de Haas-van Alphen(dHvA)振荡和密度泛函理论(DFT)计算,呈现了kagome金属ScV6Sn6的电子性质。在最高43 T的外加磁场下,转矩信号显示出清晰的dHvA振荡,包含六个主要频率,其中五个低于400 T(低频),一个接近2800 T(高频)。在量子极限附近利用Landau能级扇图计算得到的Berry相位约为π,表明ScV6Sn6中存在非平庸能带拓扑。为解释实验数据,我们使用DFT计算了原始相和电荷密度波(CDW)相中的电子能带结构与Fermi面。结果证实CDW相在能量上更有利,并且Fermi面在CDW态中发生显著重构。此外,dHvA频率的角度依赖关系与DFT计算一致。本文给出的详细电子性质对于理解ScV6Sn6以及其他钒基kagome体系的电子结构和CDW序具有重要价值。

英文摘要:

This work presents electronic properties of the kagome metal ScV6Sn6 using de Haas-van Alphen (dHvA) oscillations and density functional theory (DFT) calculations. The torque signal with the applied fields up to 43 T shows clear dHvA oscillations with six major frequencies, five of them are below 400 T (low frequencies) and one is nearly 2800 T (high frequency). The Berry phase calculated using the Landau level fan diagram near the quantum limit is approximately π, which suggests the non-trivial band topology in ScV6Sn6. To explain the experimental data, we computed the electronic band structure and Fermi surface using DFT in both the pristine and charge density wave (CDW) phases. Our results confirm that the CDW phase is energetically favorable, and the Fermi surface undergoes a severe reconstruction in the CDW state. Furthermore, the angular dependence of the dHvA frequencies are consistent with the DFT calculations. The detailed electronic properties presented here are invaluable for understanding the electronic structure and CDWorder in ScV6Sn6, as well as in other vanadium-based kagome systems.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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