半导体-金属混合纳米盘激光器
Semicoductor-metallic hybrid nano-disk laser
AI总结：
本文设计并制备基于 InGaAsP MQWs 或 InGaAs 体材料的半导体-金属混合纳米盘激光器，通过介质屏蔽层增强 SPP 模式，并验证不同尺寸与温度下的单模及多模激射。
摘要：
在本研究中，设计、制备并表征了基于 InGaAsP 多量子阱（MQWs）或 InGaAs 体材料薄膜的半导体-金属混合纳米盘激光器。通过在金属帽与增益材料之间引入透明介质屏蔽层，可以提高表面等离激元极化激元（SPP）模式的品质因数。基于 InGaAsP MQWs 的半导体-金属混合纳米激光器能够在室温下支持 SPP 模式激射。当直径为 600 nm 时，激射模式为类 TM SPP 模式。在高泵浦下，对于纳米激光器，量子阱和势垒中的量子化能级被占据。这一行为支持了多模激射。基于 InGaAs 体材料的半导体-金属混合纳米激光器表现出载流子密度使能带饱和并同样占据更高能带。该纳米激光器也支持室温下的多模激射。在 77 K 的低温下，直径为 400 nm 的纳米激光器能够支持类 TE SPP 模式激射。
英文摘要：
In this research, semiconductor-metallic hybrid nano-disk laser based on InGaAsP multi quantum wells (MQWs) or InGaAs bulk material membranes were designed, fabricated and characterized. The quality factors of surface-plasmon-polariton (SPP) modes can be improved by introducing a transparent dielectric shield layer between the metallic cap and the gain material. The InGaAsP MQWs based semiconductor-metallic hybrid nano-laser can surpport SPP mode lasing at room temperature. With diameter of 600 nm, the lasing mode is TM-like SPP mode. Under high pumping, for nano-laser, the quantized levels in the wells and the barrier are populated. This behavior supported multi-mode lasing. The InGaAs bulk material based semiconductor-metallic hybrid nano-laser perform that the carrier density saturated the energy band and populated the higher band as well. The nano-laser also supports multi-mode lasing at room temperature. At loe temperature of 77K, the nano-laser with 400 nm diameter can support TE-like SPP mode lasing.
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