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arXiv 2308.03430cond-mat.mtrl-sci

电场诱导单层 CrSBr 中的半金属

Electric-field induced half-metal in monolayer CrSBr

Hao-Tian Guo, San-Dong Guo, Yee Sin Ang

AI总结:

本文提出通过电场调控在双层磁性原子的二维铁磁材料中实现半金属性的新机制,以单层 CrSBr 为例经第一性原理计算验证其可行性,并设计了基于该材料的存储器件,推动其在自旋电子纳米器件中的应用。

摘要:

二维(2D)半金属材料对于纳米尺度自旋电子学应用极具吸引力。本文提出一种新机制,可通过电场调控在具有两层磁性原子的二维铁磁(FM)材料中实现半金属性。我们以实验已合成的 CrSBr 单层为具体实例,通过第一性原理计算阐述该方案。研究发现,在适当的电场范围内 CrSBr 可实现半金属,且相应的电场强度幅度在实验中是可获得的。构建了 Janus 单层 $\mathrm{Cr_2S_2BrI}$,由于水平镜像对称性破缺而具有内建电场。然而,无论是否施加外电场,$\mathrm{Cr_2S_2BrI}$ 始终为铁磁半导体。此外,还基于 CrSBr 单层提出了一种可能的存储器件。我们的工作将推动二维铁磁 CrSBr 在未来自旋电子纳米器件中的应用。

英文摘要:

Two-dimensional (2D) half-metallic materials are highly desirable for nanoscale spintronic applications. Here, we propose a new mechanism that can achieve half-metallicity in 2D ferromagnetic (FM) material with two-layer magnetic atoms by electric field tuning. We use a concrete example of experimentally synthesized CrSBr monolayer to illustrate our proposal through the first-principle calculations. It is found that the half-metal can be achieved in CrSBr within appropriate electric field range, and the corresponding amplitude of electric field intensity is available in experiment. Janus monolayer $\mathrm{Cr_2S_2BrI}$ is constructed, which possesses built-in electric field due to broken horizontal mirror symmetry. However, $\mathrm{Cr_2S_2BrI}$ without and with applied external electric field is always a FM semiconductor. A possible memory device is also proposed based on CrSBr monolayer. Our works will stimulate the application of 2D FM CrSBr in future spintronic nanodevices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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