准二维电荷密度波 1T-TaS$_2$ 薄膜中的电导涨落与畴脱钉
Conductance Fluctuations and Domain Depinning in Quasi-2D Charge-Density-Wave 1T-TaS$_2$ Thin Films
AI总结：
本研究测量准二维 1T-TaS$_2$ 薄膜的微分电流-电压特性，揭示电荷密度波相变与畴脱钉处的电导涨落，并阐明温度、厚度、表面钉扎及局部加热对阈值电场的影响。
摘要：
我们研究了准二维 1T-TaS$_2$ van der Waals 材料薄膜中电导涨落的温度依赖关系。电导涨落由两端 1T-TaS$_2$ 器件的微分电流-电压特性确定，在对应于各种电荷密度波宏观量子凝聚相之间转变的电场下，以及在电荷密度波畴开始脱钉时显著出现。在近公度电荷密度波相内，脱钉阈值电场 $E_D$ 随温度降低而单调增加。$E_D$ 值随 1T-TaS$_2$ 薄膜厚度减小而增加，揭示了电荷密度波的表面钉扎效应。我们的分析表明，在公度相中不存在脱钉。脱钉由电场诱导，但由局部加热促进。所测得的畴脱钉 $E_D$ 变化趋势，对于理解准二维晶体中电荷密度波的物理机制，以及开发基于此类量子材料的电子器件具有重要意义。
英文摘要：
We investigated the temperature dependence of the conductance fluctuations in thin films of the quasi-two-dimensional 1T-TaS$_2$ van der Waals material. The conductance fluctuations, determined from the derivative current-voltage characteristics of two-terminal 1T-TaS$_2$ devices, appear prominently at the electric fields that correspond to the transitions between various charge-density-wave macroscopic quantum condensate phases and at the onset of the depinning of the charge density wave domains. The depinning threshold field, $E_D$, monotonically increases with decreasing temperature within the nearly commensurate charge-density-wave phase. The $E_D$ value increases with the decreasing 1T-TaS$_2$ film thickness, revealing the surface pinning of the charge density waves. Our analysis suggests that depinning is absent in the commensurate phase. It is induced by the electric field but facilitated by local heating. The measured trends for $E_D$ of the domain depinning are important for understanding the physics of charge density waves in quasi-two-dimensional crystals and for developing electronic devices based on this type of quantum materials.
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