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arXiv 2303.05085cond-mat.mtrl-scicond-mat.mes-hall
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电场下SiO2/4H-SiC界面Kohn-Sham波函数的原子尺度局域化:偏离有效质量近似的包络函数

Atomic scale localization of Kohn-Sham wavefunction at SiO2/4H-SiC interface under electric field, deviating from envelope function by effective mass approximation

Hironori Yoshioka, Jun-Ichi Iwata, Yu-ichiro Matsushita

AI总结:

利用密度泛函理论计算电场下SiO2/4H-SiC界面的Kohn-Sham波函数,揭示电子在原子尺度局域于近界面立方晶位,解释EMA失效及(0001)面低沟道电导率成因。

摘要:

为阐明SiO2/4H-SiC界面沟道电导率偏低的原因,在施加电场条件下采用密度泛函理论计算了SiC导带底处的波函数。我们发现,4H-SiC (0001)板坯的波函数倾向于局域在最靠近界面的立方晶位。重要的是,由于传导电子分布在比有效质量近似(EMA)预期更靠近界面的位置(小于5埃),它们会更频繁地受到界面缺陷散射。这被认为是(0001)面沟道电导率相比(11-20)等其他晶面尤其低的原因。EMA在(0001)界面处失效,与4H-SiC晶体沿[0001]方向较长的结构周期性有关。

英文摘要:

To clarify the cause of the low channel conductivity at the SiO2/4H-SiC interface, the wavefunction at the SiC conduction band minimum was calculated using density functional theory under an applied electric field. We found that the wavefunction for a 4H-SiC (0001) slab tends to be localized at the cubic site closest to the interface. Importantly, because the conduction electrons are distributed closer to the interface (< 5 angstroms) than expected from the effective mass approximation (EMA), they are more frequently scattered by interface defects. This is expected to be the reason why the channel conductivity for the (0001) face is particularly low compared with that for other faces, such as (11-20). The breakdown of the EMA for the (0001) interface is related to the long structural periodicity along the [0001] direction in 4H-SiC crystals.

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