arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1507.04702cond-mat.mtrl-sci
收藏

Kohn-Sham密度泛函理论状态方程计算的无轨道扩展:对二氧化硅的应用

Orbital-free extension to Kohn-Sham density functional theory equation of state calculations: application to silicon dioxide

Travis Sjostrom, Scott Crockett

摘要:

二氧化硅SiO $_2$的液体状态方程通过量子分子动力学在5至15 g/cc的密度范围内和在0.5至100 eV的温度下计算,包括$α$ -石英和stishovite相Hugoniot曲线。低于8 eV的计算是基于Kohn-Sham密度泛函理论(DFT),高于8 eV的一个新的无轨道DFT公式,这里提出的,基于匹配的Kohn-Sham DFT计算。最近的实验冲击数据被发现是非常好的协议与目前的结果。最后,结合实验和模拟数据,建立了一个新的SiO $_2$液相状态方程表。

英文摘要:

The liquid regime equation of state of silicon dioxide SiO$_2$ is calculated via quantum molecular dynamics in the density range 5 to 15 g/cc and with temperatures from 0.5 to 100 eV, including the $α$-quartz and stishovite phase Hugoniot curves. Below 8 eV calculations are based on Kohn-Sham density functional theory (DFT), above 8 eV a new orbital-free DFT formulation, presented here, based on matching Kohn-Sham DFT calculations is employed. Recent experimental shock data is found to be in very good agreement with the current results. Finally both experimental and simulation data are used in constructing a new liquid regime equation of state table for SiO$_2$.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑